N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain current and RoHS compliant design
Key Attributes
Model Number:
HYG180N10LS1C2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
46A
Operating Temperature -:
-55℃~+175℃
RDS(on):
16.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
21.9pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
83.3W
Input Capacitance(Ciss):
1.548nF
Gate Charge(Qg):
23.8nC@10V
Mfr. Part #:
HYG180N10LS1C2
Package:
PDFN-8(5x6)
Product Description
HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET
The HYG180N10LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 16.5m (typ.) at VGS = 10V and 20m (typ.) at VGS = 6V, a 100V drain-source voltage, and 46A continuous drain current. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available (RoHS Compliant). It is particularly suitable for high-frequency synchronous buck converters.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Package Type: PDFN8L (5x6)
- Certifications: RoHS Compliant, Halogen-Free and Green Devices Available
- Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish.
Technical Specifications
| Parameter | Test Conditions | Rating | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 100 | V | |
| Gate-Source Voltage (VGSS) | ±20 | V | |
| Maximum Junction Temperature (TJ) | -55 to 175 | °C | |
| Storage Temperature Range (TSTG) | -55 to 175 | °C | |
| Source Current-Continuous (IS) (Body Diode, Tc=25°C, Mounted on Large Heat Sink) | 46 | A | |
| Pulsed Drain Current (IDM) (Tc=25°C) | * | 130 | A |
| Continuous Drain Current (ID) (Tc=25°C) | 46 | A | |
| Continuous Drain Current (ID) (Tc=100°C) | 32.5 | A | |
| Maximum Power Dissipation (PD) (Tc=25°C) | 83.3 | W | |
| Maximum Power Dissipation (PD) (Tc=100°C) | 41.6 | W | |
| Thermal Resistance, Junction-to-Case (RθJC) | 1.8 | °C/W | |
| Thermal Resistance, Junction-to-Ambient (RθJA) | ** | 47 | °C/W |
| Single Pulsed-Avalanche Energy (EAS) (L=0.3mH) | *** | 65.75 | mJ |
| Electrical Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250µA | 100 | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V, VGS=0V | - | 1.0 µA |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | 50 µA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 1 / 2 / 3 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V, VDS=0V | - | ±100 nA |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=20A | - / 16.5 / 21 | mΩ |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=6V, IDS=20A | - / 20 / 26 | mΩ |
| Diode Forward Voltage (VSD) | ISD=20A, VGS=0V | - / 0.92 / 1.3 | V |
| Reverse Recovery Time (trr) | ISD=20A, dISD/dt=100A/µs | - / 51.6 / - | ns |
| Reverse Recovery Charge (Qrr) | - / 84.4 / - | nC | |
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | - / 1.9 / - | Ω |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - / 1548 / - | pF |
| Output Capacitance (Coss) | - / 449.2 / - | pF | |
| Reverse Transfer Capacitance (Crss) | - / 21.9 / - | pF | |
| Turn-on Delay Time (td(ON)) | VDD=50V, RG=2.5Ω, IDS=20A, VGS=10V | - / 10.5 / - | ns |
| Turn-on Rise Time (Tr) | - / 24 / - | ns | |
| Turn-off Delay Time (td(OFF)) | - / 20.6 / - | ns | |
| Turn-off Fall Time (Tf) | - / 4.8 / - | ns | |
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=20A | - / 23.8 / - | nC |
| Gate-Source Charge (Qgs) | - / 7.6 / - | nC | |
| Gate-Drain Charge (Qgd) | - / 3.6 / - | nC | |
2409302230_HUAYI-HYG180N10LS1C2_C5121300.pdf
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