High Cell Density Trenched P Channel MOSFET HUASHUO HSL6107 Suitable for Synchronous Buck Converters
Key Attributes
Model Number:
HSL6107
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF
Number:
1 P-Channel
Output Capacitance(Coss):
59pF
Input Capacitance(Ciss):
531pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
HSL6107
Package:
SOT-223
Product Description
Product Overview
The HSL6107 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSL6107 | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -10V | -2.3 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -10V | -1.9 | A | |||
| Pulsed Drain Current (IDM) | -12 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 11.7 | mJ | ||||
| Avalanche Current (IAS) | -15.3 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 85 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 48 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-2A | 140 | 180 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Electrical Characteristics | Drain-Source Leakage Current (IDSS) | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg) | VDS=-20V , VGS=-4.5V , ID=-2A | 4.6 | nC | |||
| Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 531 | pF | |||
| Output Capacitance (Coss) | 59 | pF | ||||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | -2.3 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
Note: Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper unless otherwise noted. Pulsed data has pulse width 300s, duty cycle 2%. EAS data shows Max. rating. Power dissipation is limited by 150 junction temperature.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSL6107 | SOT-223 | 3000/Tape&Reel |
2410121455_HUASHUO-HSL6107_C2828484.pdf
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