Power management optimized N Channel MOSFET HUASHUO HSBB0012 with low on resistance and fast switching
Key Attributes
Model Number:
HSBB0012
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
105mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
3.7pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
310pF@50V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
HSBB0012
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB0012 is a new generation N-Channel MOSFET featuring low on-resistance and fast switching, making it ideal for high efficiency power management applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. It offers super low gate charge, excellent Cdv/dt effect decline, and is optimized for fast-switching applications.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 20 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 14 | A | |||
| IDM | Pulsed Drain Current | 80 | A | |||
| EAS | Single Pulse Avalanche Energy | 1.8 | mJ | |||
| PD@TC=25 | Total Power Dissipation | 21 | W | |||
| PD@TA=25 | Total Power Dissipation | 1.8 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 65 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.098 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=5A | --- | 93 | 105 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=5A | --- | 118 | 145 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -4.57 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 4 | --- | |
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=5A | --- | 5.4 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.1 | --- | ||
| Qgd | Gate-Drain Charge | --- | 0.9 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3 ID=10A | --- | 5 | --- | ns |
| Tr | Rise Time | --- | 3 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 20 | --- | ||
| Tf | Fall Time | --- | 5 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 310 | --- | pF |
| Coss | Output Capacitance | --- | 20 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 3.7 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 20 | A |
| ISM | Pulsed Source Current | --- | --- | 80 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=5A , dI/dt=100A/s , TJ=25 | --- | 18 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 48 | --- | nC | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB0012 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410121656_HUASHUO-HSBB0012_C701031.pdf
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