40V P channel MOSFET HUASHUO HSBB4115 featuring trench technology and low gate charge for power switching
Key Attributes
Model Number:
HSBB4115
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
39A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
222pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.5nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
27.9nC@4.5V
Mfr. Part #:
HSBB4115
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4115 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Technology: Trench MOSFET
- Channel Type: P-Channel
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -39 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -24 | A | |||
| IDM | Pulsed Drain Current2 | -150 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 130 | mJ | |||
| IAS | Avalanche Current | -51 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.023 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | 10.5 | 13 | m | |
| VGS=-4.5V , ID=-12A | 15 | 20 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.74 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-32V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-18A | 24 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | 14 | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-12A | 27.9 | --- | nC | |
| Qgs | Gate-Source Charge | 7.7 | --- | nC | ||
| Qgd | Gate-Drain Charge | 7.5 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 40 | --- | ns | |
| tr | Rise Time | 35.2 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 100 | --- | ns | ||
| tf | Fall Time | 9.6 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3500 | --- | pF | |
| Coss | Output Capacitance | 323 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 222 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -39 | A | |
| ISM | Pulsed Source Current2,5 | --- | -77 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V | |
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-51A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB4115 | PRPAK3*3 | 3000/Tape&Reel |
2410121455_HUASHUO-HSBB4115_C2828497.pdf
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