40V P channel MOSFET HUASHUO HSU4103 featuring low gate charge and excellent switching performance
Key Attributes
Model Number:
HSU4103
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
102pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.415nF@15V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
HSU4103
Package:
TO-252-2
Product Description
Product Overview
The HSU4103 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch 40V Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -27 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -21 | A | |||
| IDM | Pulsed Drain Current2 | -54 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 40.9 | mJ | |||
| IAS | Avalanche Current | -28.6 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 35 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 3.6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.02 | --- | V/ | |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-8A | --- | 32 | m | |
| VGS=-4.5V , ID=-4A | --- | 46 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 3.72 | --- | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-32V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-8A | 10.7 | --- | S | |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-1A | 11.5 | --- | nC | |
| Qgs | Gate-Source Charge | 3.5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 3.3 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 22 | --- | ns | |
| Tr | Rise Time | 15.7 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 59 | --- | ns | ||
| Tf | Fall Time | 5.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 1415 | --- | pF | |
| Coss | Output Capacitance | 134 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 102 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -27 | A | |
| ISM | Pulsed Source Current2,5 | --- | -54 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU4103 | TO252-2 | 2500/Tape&Reel | ||||
Notes:
1 The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
3 The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-28.6A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121455_HUASHUO-HSU4103_C508797.pdf
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