Power MOSFET HUAYI HYG210P06LQ1D P Channel Type with 40A Continuous Drain Current and Low Resistance
Key Attributes
Model Number:
HYG210P06LQ1D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Output Capacitance(Coss):
123pF
Input Capacitance(Ciss):
3.679nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
HYG210P06LQ1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG210P06LQ1 is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers a -60V/-40A rating with low on-state resistance (RDS(ON) = 19m typ. @VGS = -10V). This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS Compliant) versions. It is suitable for DC/DC power management, load switching, and motor control applications.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | -60 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | C | ||
| TSTG | Storage Temperature Range | -55 | 175 | C | ||
| IS | Drain Current-Continuous | Tc=25C | -40 | A | ||
| Mounted on Large Heat Sink | ||||||
| IDM | Pulsed Drain Current * | Tc=25C | -140 | A | ||
| ID | Continuous Drain Current | Tc=25C | -40 | A | ||
| Tc=100C | -28 | A | ||||
| PD | Maximum Power Dissipation | Tc=25C | 60 | W | ||
| Tc=100C | 30 | W | ||||
| RJC | Thermal Resistance, Junction-to-Case | 2.5 | C/W | |||
| RJA | Thermal Resistance, Junction-to-Ambient ** | Surface mounted on FR-4 board. | 110 | C/W | ||
| EAS | Single Pulsed-Avalanche Energy *** | L=0.3mH | 289 | mJ | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=-250uA | -60 | V | ||
| IDSS | Drain-to-Source Leakage Current | VDS=-60V, VGS=0V | -1 | uA | ||
| TJ=125C | -50 | uA | ||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=-250uA | -1.0 | -1.7 | -3.0 | V |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| RDS(ON)* | Drain-Source On-state Resistance | VGS=-10V,ID= -20A | 19 | 25 | m | |
| VGS=-4.5V,ID= -20A | 25 | 32 | m | |||
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage | ISD= -20A,VGS=0V | -0.9 | -1.3 | V | |
| trr | Reverse Recovery Time | ISD= -20A,dI/dt=100A/us | 28 | ns | ||
| Qrr | Reverse Recovery Charge | 25 | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V, F=1MHz | 6.4 | |||
| Ciss | Input Capacitance | VGS=0V, VDS=-25V, Frequency=1.0MHz | 3679 | pF | ||
| Coss | Output Capacitance | 123 | pF | |||
| Crss | Reverse Transfer Capacitance | 60 | pF | |||
| td(ON) | Turn-on Delay Time | VDD= -25V,RG=3, IDS= -20A,VGS=-10V | 11 | ns | ||
| Tr | Turn-on Rise Time | 17 | ns | |||
| td(OFF) | Turn-off Delay Time | 73 | ns | |||
| Tf | Turn-off Fall Time | 31 | ns | |||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = -48V, VGS= -10V ID= -20A | 90 | nC | ||
| Qgs | Gate-Source Charge | 6 | nC | |||
| Qgd | Gate-Drain Charge | 18 | nC | |||
2409291934_HUAYI-HYG210P06LQ1D_C2834760.pdf
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