Dual N Channel MOSFET HUASHUO HSBA4204 with 40V Drain Source Voltage and RoHS Certified Green Product
Key Attributes
Model Number:
HSBA4204
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
2 N-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
1.314nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
10.7nC@4.5V
Mfr. Part #:
HSBA4204
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4204 is a dual N-channel MOSFET featuring 40V breakdown voltage and fast switching capabilities. Designed with high cell density trench technology, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It provides super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Model: HSBA4204
- Type: Dual N-Channel MOSFET
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ 10V1 | 20 | A | |||
| IDM | Pulsed Drain Current2 | 100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 31 | mJ | |||
| IAS | Avalanche Current | 25 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 62.5 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 6 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.034 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=6A | --- | 11.5 | 15 | m |
| VGS=4.5V , ID=3A | --- | 15 | 20 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -5.64 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=6A | --- | 31 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.1 | --- | |
| Capacitance | Ciss Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1314 | --- | pF |
| Coss Output Capacitance | --- | 120 | --- | pF | ||
| Crss Reverse Transfer Capacitance | --- | 88 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 30 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Switching Time (VDD=12V , ID=6A, RG=3.3) | ||||||
| td(on) | Turn-On Delay Time | VGS=10V | --- | 8.6 | --- | ns |
| tr | Rise Time | --- | 3.4 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 25 | --- | ns | |
| tf | Fall Time | --- | 2.2 | --- | ns | |
| Gate Charge (VDS=20V, ID=6A) | ||||||
| Qg | Total Gate Charge (4.5V) | VGS=4.5V | --- | 10.7 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.3 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 4.2 | --- | nC | |
Notes:
- The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=25A.
- The power dissipation is limited by 175 junction temperature.
- The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121523_HUASHUO-HSBA4204_C2903569.pdf
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