Low Gate Charge P Channel MOSFET HUASHUO HSBA1119 Designed for Synchronous Buck Converter Applications
Key Attributes
Model Number:
HSBA1119
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
210A
RDS(on):
1.6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.3nF
Number:
1 P-Channel
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
170nC@4.5V
Mfr. Part #:
HSBA1119
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA1119 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel 12V Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -210 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -154 | A | |||
| IDM | Pulsed Drain Current2 | -830 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 370 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 110 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t10S) | 18 | /W | |||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | 60 | /W | |||
| RJC | Thermal Resistance Junction-case 1 | 1.4 | /W | |||
| Product Summary | ||||||
| 1.2 | m | |||||
| ID | -210 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -12 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 1.2 | 1.6 | m | |
| VGS=-2.5V , ID=-20A | 1.8 | 2.1 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -1.0 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-12V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-12V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| Rg | Gate resistance | VGS=0V, VDS=0V, f=1.0MHz | 1.9 | |||
| Qg | Total Gate Charge | VDS=-6V , VGS=-4.5V , ID=-20A | 170 | nC | ||
| Qgs | Gate-Source Charge | 22 | ||||
| Qgd | Gate-Drain Charge | 33 | ||||
| td(on) | Turn-On Delay Time | VDD=-6V , VGS=-10V , RG=3, ID=-20A | 17 | ns | ||
| tr | Rise Time | 8.1 | ||||
| td(off) | Turn-Off Delay Time | 25 | ||||
| tf | Fall Time | 33 | ||||
| Ciss | Input Capacitance | VDS=-6V , VGS=0V , f=1MHz | 18211 | pF | ||
| Coss | Output Capacitance | 1480 | ||||
| Crss | Reverse Transfer Capacitance | 1300 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -210 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 30 | nS | ||
| Qrr | Reverse Recovery Charge | 19 | nC | |||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA1119 | PRPAK5*6 | 3000/Tape&Reel | ||||
2411061707_HUASHUO-HSBA1119_C42376807.pdf
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