Trenched P channel MOSFET HUASHUO HSBA100P03 with RoHS compliance and superior switching performance
Key Attributes
Model Number:
HSBA100P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.3mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
500pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
7.9nF@25V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
140nC@10V
Mfr. Part #:
HSBA100P03
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA100P03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It features super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology, enabling fast switching performance.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
- Package: PRPAK5X6
- Packaging: 3000/Tape&Reel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -64 | A | |||
| IDM | Pulsed Drain Current2 | -400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 310 | mJ | |||
| IAS | Avalanche Current | -80 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 1(t≤10S) | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient | 1(Steady State) | 62 | /W | ||
| RJC | Thermal Resistance Junction-case | 1 | 0.9 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 2.6 | 3.3 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 3.8 | 5 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge (-10V) | VDS=-24V , VGS=-10V , ID=-10A | 140 | nC | ||
| Qgs | Gate-Source Charge | 22 | nC | |||
| Qgd | Gate-Drain Charge | 31 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=5Ω, ID=-10A | 17 | ns | ||
| Tr | Rise Time | 60 | ns | |||
| Td(off) | Turn-Off Delay Time | 200 | ns | |||
| Tf | Fall Time | 111 | ns | |||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 7900 | pF | ||
| Coss | Output Capacitance | 980 | pF | |||
| Crss | Reverse Transfer Capacitance | 500 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -100 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | 53 | nS | ||
| Qrr | Reverse Recovery Charge | 52 | nC | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-50V, VGS=-10V, L=0.1mH, IAS=-80A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. The maximum current rating is package limited.
2410121656_HUASHUO-HSBA100P03_C701057.pdf
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