Durable Single N Channel Enhancement Mode MOSFET HUAYI HYG045N03LA1C2 with Low On State Resistance
Key Attributes
Model Number:
HYG045N03LA1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
223pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.13nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
24.1nC@4.5V
Mfr. Part #:
HYG045N03LA1C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HYG045N03LA1C2 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-state resistance (RDS(ON)) at different gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Halogen-free options are available.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS compliant, Halogen free
Technical Specifications
| Model | Feature | Parameter | Rating Unit | Min | Typ. | Max | Test Conditions |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-Source Voltage (VDSS) | V | - | - | 30 | VGS=0V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate-Source Voltage (VGSS) | V | - | - | ±20 | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Junction Temperature Range (TJ) | °C | -55 | - | 175 | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Storage Temperature Range (TSTG) | °C | -55 | - | 175 | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Source Current-Continuous (IS) | A | - | - | 78 | Tc=25°C, Mounted on Large Heat Sink |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Pulsed Drain Current (IDM) | A | - | - | 290 | Tc=25°C, pulse width limited by max.junction temperature |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Continuous Drain Current (ID) | A | - | - | 78 | Tc=25°C |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Continuous Drain Current (ID) | A | - | - | 55 | Tc=100°C |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Maximum Power Dissipation (PD) | W | - | - | 52 | Tc=25°C |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Maximum Power Dissipation (PD) | W | - | - | 26 | Tc=100°C |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Thermal Resistance, Junction-to-Case (RθJC) | °C/W | - | 2.85 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Thermal Resistance, Junction-to-Ambient (RθJA) | °C/W | - | 45 | - | Surface mounted on FR-4 board |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Single Pulsed-Avalanche Energy (EAS) | mJ | - | 108 | - | L=0.1mH, Limited by TJmax, starting TJ=25°C, RG =25Ω,VGS =10V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-Source Breakdown Voltage (BVDSS) | V | 30 | - | - | VGS=0V,IDS=250μA |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-to-Source Leakage Current (IDSS) | μA | - | - | 1 | VDS=30V,VGS=0V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-to-Source Leakage Current (IDSS) | μA | - | - | 50 | TJ=125°C |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate Threshold Voltage (VGS(th)) | V | 1 | 1.6 | 3 | VDS=VGS, IDS=250μA |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate-Source Leakage Current (IGSS) | nA | - | - | ±100 | VGS=±20V,VDS=0V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-Source On-State Resistance (RDS(ON)) | mΩ | - | 3.6 | 4.3 | VGS=10V,IDS=20A |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Drain-Source On-State Resistance (RDS(ON)) | mΩ | - | 4.8 | 5.8 | VGS=4.5V,IDS=20A |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Diode Forward Voltage (VSD) | V | - | 0.82 | - | ISD=20A,VGS=0V, Pulse test |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Reverse Recovery Time (trr) | ns | - | 13.4 | - | ISD=20A,dISD/dt=100A/μs |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Reverse Recovery Charge (Qrr) | nC | - | 5.6 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate Resistance (RG) | Ω | - | 10 | - | VGS=0V,VDS=0V,F=1MHz |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Input Capacitance (Ciss) | pF | - | 2130 | - | VGS=0V, VDS=25V, Frequency=1.0MHz |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Output Capacitance (Coss) | pF | - | 270 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Reverse Transfer Capacitance (Crss) | pF | - | 223 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Turn-on Delay Time (td(ON)) | ns | - | 6.4 | - | VDD=15V,RG=4Ω, IDS=20A,VGS=10V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Turn-on Rise Time (Tr) | ns | - | 41.6 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Turn-off Delay Time (td(OFF)) | ns | - | 105.2 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Turn-off Fall Time (Tf) | ns | - | 63.1 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Total Gate Charge (Qg) | nC | - | 47.7 | - | VDS =24V, VGS=10V, IDS=20A |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Total Gate Charge (Qg) | nC | - | 24.1 | - | VGS=4.5V |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate-Source Charge (Qgs) | nC | - | 7.1 | - | |
| HYG045N03LA1C2 | Single N-Channel Enhancement Mode MOSFET | Gate-Drain Charge (Qgd) | nC | - | 11.4 | - |
2410122027_HUAYI-HYG045N03LA1C2_C2830479.pdf
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