Fast Switching N Channel MOSFET HUASHUO HSU6008 Featuring High Cell Density Trench and Excellent RDS
Key Attributes
Model Number:
HSU6008
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
715pF@15V
Pd - Power Dissipation:
20.8W
Mfr. Part #:
HSU6008
Package:
TO-252
Product Description
Product Overview
The HSU6008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include Green Device availability, super low gate charge, and excellent CdV/dt effect decline, all enabled by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSU6008 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@Tc=25) | VGS @ 10V | 10 | A | |||
| Continuous Drain Current (ID@Tc=100) | VGS @ 10V | 7 | A | |||
| Pulsed Drain Current (IDM) | 20 | A | ||||
| Total Power Dissipation (PD@TA=25) | 20.8 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 6 | /W | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | ID=10A | VGS=10V | 90 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | ID=8A | VGS=4.5V | 100 | m | ||
| Gate Threshold Voltage (VGS(th)) | ID =250uA | VGS=VDS | 1.2 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | 100 | nA | ||
| HSU6008 | Total Gate Charge (Qg) | VDS=48V , VGS=4.5V , ID=10A | 5 | 7.0 | nC | |
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 511 | 715 | pF | ||
| Output Capacitance (Coss) | 38 | 53 | pF | |||
| Reverse Transfer Capacitance (Crss) | 25 | 35 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 10 | A | ||
| Diode Forward Voltage (VSD) | IS=1A , TJ=25 | VGS=0V | --- | 1.2 | V |
2410121642_HUASHUO-HSU6008_C701006.pdf
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