P Channel 100V Fast Switching MOSFET HUASHUO HSBB0115 with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
HSBB0115
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
3.029nF@20V
Gate Charge(Qg):
44.5nC@10V
Mfr. Part #:
HSBB0115
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB0115 is a P-Channel, 100V Fast Switching MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Voltage Rating: 100V
- Switching Speed: Fast Switching
- Technology: Advanced Trench MOSFET
- Compliance: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -100 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -12 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -7.8 | A |
| IDM | Pulsed Drain Current | -50 | A |
| EAS | Single Pulse Avalanche Energy | 90 | mJ |
| IAS | Avalanche Current | 18.9 | A |
| PD@TC=25 | Total Power Dissipation | 35 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| Thermal Data | ||||
|---|---|---|---|---|
| Symbol | Parameter | Typ. | Max. | Unit |
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W |
| RJC | Thermal Resistance Junction-Case | --- | 2.3 | /W |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-10A | --- | 78 | 95 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-8A | --- | 86 | 110 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -1.7 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-10A | --- | 24 | --- | S |
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-20A | --- | 44.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 9.13 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 5.93 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-10A | --- | 12 | --- | ns |
| Tr | Rise Time | --- | 27.4 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 79 | --- | ns | |
| Tf | Fall Time | --- | 53.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 3029 | --- | pF |
| Coss | Output Capacitance | --- | 129 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 76 | --- | pF | |
| Diode Characteristics | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -12 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| trr | Reverse Recovery Time | IF=-8A , di/dt=-100A/s , TJ=25 | --- | 38.7 | --- | ns |
| Qrr | Reverse Recovery Charge | --- | 22.4 | --- | nC | |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB0115 | PRPAK3*3 | 3000/Tape&Reel |
2410122026_HUASHUO-HSBB0115_C22359236.pdf
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