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quality Dual N Channel MOSFET HUASHUO HSBA6214 Featuring RoHS and Green Device Compliance for Power Systems factory
quality Dual N Channel MOSFET HUASHUO HSBA6214 Featuring RoHS and Green Device Compliance for Power Systems factory

Dual N Channel MOSFET HUASHUO HSBA6214 Featuring RoHS and Green Device Compliance for Power Systems

Key Attributes
Model Number: HSBA6214
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.027nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
HSBA6214
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA6214 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for applications requiring fast switching and low power loss.

Product Attributes

  • Brand: HS (implied by "www.hs-semi.cn")
  • Product Type: Dual N-Channel MOSFET
  • Certifications: RoHS, Green Device Available
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

Product Summary HSBA6214
Symbol Parameter Rating Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 17 A
ID@TC=70 Continuous Drain Current, VGS @ 10V1 11 A
IDM Pulsed Drain Current2 40 A
EAS Single Pulse Avalanche Energy3 22 mJ
IAS Avalanche Current 21 A
PD@TA=25 Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Thermal Data
RJA Thermal Resistance Junction-ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 5 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage 60 V
RDS(ON),typ On-Resistance, typ. (VGS=10V, ID=15A) 35 m
ID Continuous Drain Current (TC=25) 17 A
VGS(th) Gate Threshold Voltage (VGS=VDS, ID =250uA) 1.0 to 2.5 V
IDSS Drain-Source Leakage Current (VDS=48V, VGS=0V, TJ=25) --- 1 uA
IGSS Gate-Source Leakage Current (VGS=±20V, VDS=0V) --- ±100 nA
Qg Total Gate Charge (VDS=48V, VGS=10V, ID=15A) 19 nC
Ciss Input Capacitance (VDS=15V, VGS=0V, f=1MHz) 1027 pF
Coss Output Capacitance 65 pF
Crss Reverse Transfer Capacitance 46 pF
Diode Characteristics
IS Continuous Source Current1,5 (VG=VD=0V, Force Current) --- 17 A
VSD Diode Forward Voltage (VGS=0V, IS=1A, TJ=25) --- 1.2 V
trr Reverse Recovery Time (IF=4A, dI/dt=100A/µs, TJ=25) --- 12.1 nS
Qrr Reverse Recovery Charge --- 6.7 nC

2410121653_HUASHUO-HSBA6214_C2828502.pdf
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