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quality Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG060N08NS1B with 80 Volt 105 Amp Rating factory
quality Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG060N08NS1B with 80 Volt 105 Amp Rating factory

Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG060N08NS1B with 80 Volt 105 Amp Rating

Key Attributes
Model Number: HYG060N08NS1B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.95nF@25V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
HYG060N08NS1B
Package:
TO-263-2
Product Description

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET

The HYG060N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a high performance with low on-resistance (RDS(ON)=5.5 m typ. @ VGS = 10V), 80V/105A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-Free and Green devices are available, compliant with RoHS standards.

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Product Line: HYG060N08NS1P/B
  • Material: Lead-Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification.

Technical Specifications

Parameter Symbol Test Conditions Min Typ. Max Unit
Absolute Maximum Ratings
Drain-Source Voltage VDSS Tc=25C Unless Otherwise Noted - - 80 V
Gate-Source Voltage VGSS - - 20 V
Junction Temperature Range TJ - -55 - 175 C
Storage Temperature Range TSTG - -55 - 175 C
Continuous Drain Current ID Tc=25C - - 105 A
Continuous Drain Current ID Tc=100C - - 74.2 A
Pulsed Drain Current IDM Tc=25C * - - 350 A
Maximum Power Dissipation PD Tc=25C - - 125 W
Maximum Power Dissipation PD Tc=100C - - 62.5 W
Thermal Resistance, Junction-to-Case RJC - - 1.2 - C/W
Thermal Resistance, Junction-to-Ambient RJA ** - - 62.5 C/W
Single Pulsed Avalanche Energy EAS L=0.3mH *** - 225 - mJ
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS= 250A 80 - - V
Drain-to-Source Leakage Current IDSS VDS= 80V,VGS=0V - - 1 A
Drain-to-Source Leakage Current IDSS TJ=125C - - 50 A
Gate Threshold Voltage VGS(th) VDS=VGS, IDS= 250A 2 3 4 V
Gate-Source Leakage Current IGSS VGS=20V,VDS=0V - - 100 nA
Drain-Source On-State Resistance RDS(ON) VGS= 10V,IDS=40A - 5.5 6.0 m
Diode Forward Voltage VSD ISD=40A,VGS=0V - 0.94 1.2 V
Reverse Recovery Time trr ISD=40A,dISD/dt=100A/s - 45 - ns
Reverse Recovery Charge Qrr - - 58 - nC
Gate Resistance RG VGS=0V,VDS=0V,F=1MHz - 2.3 -
Input Capacitance Ciss VGS=0V, VDS= 25V, Frequency=1.0MHz - 2950 - pF
Output Capacitance Coss - - 1190 - pF
Reverse Transfer Capacitance Crss - - 60 - pF
Turn-on Delay Time td(ON) VDD= 40V,RG=4.0, IDS= 40A,VGS= 10V - 12 - ns
Turn-on Rise Time Tr - - 55 - ns
Turn-off Delay Time td(OFF) - - 34 - ns
Turn-off Fall Time Tf - - 65 - ns
Total Gate Charge Qg VDS = 64V, VGS= 10V, IDs= 40A - 48 - nC
Gate-Source Charge Qgs - - 15 - nC
Gate-Drain Charge Qgd - - 13 - nC

2410121248_HUAYI-HYG060N08NS1B_C2925049.pdf

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