N Channel MOSFET HUASHUO HSBA0048A Featuring 100V Drain Source Voltage and 78A Continuous Current
Key Attributes
Model Number:
HSBA0048A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
78A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6.6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
108W
Input Capacitance(Ciss):
3.14nF@50V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSBA0048A
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0048A is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers 100V drain-source voltage and a continuous drain current of up to 78A. This MOSFET is characterized by its fast switching speed, 100% EAS guaranteed performance, and availability in a Green Device option. It is ideal for high-frequency switching, synchronous rectification, and DC/DC converter applications.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS Technology
- Environmental: Green Device Available
Technical Specifications
| Model | Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| HSBA0048A | Drain-Source Voltage (VDS) | 100 | V | ||||
| Gate-Source Voltage (VGS) | 20 | V | |||||
| Continuous Drain Current (ID@TC=25) | 78 | A | 1,6 | ||||
| Continuous Drain Current (ID@TC=70) | 62 | A | 1,6 | ||||
| Pulsed Drain Current (IDM) | 280 | A | 2 | ||||
| Single Pulse Avalanche Energy (EAS) | 40 | mJ | 3 | ||||
| Avalanche Current (IAS) | 28 | A | |||||
| Total Power Dissipation (PD@TC=25) | 108 | W | 4 | ||||
| Storage Temperature Range (TSTG) | -55 to 150 | ||||||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | 100 | V | VGS=0V , ID=250uA | 100 | |||
| Static Drain-Source On-Resistance (RDS(ON)) | m | VGS=10V , ID=13.5A | 6.6 | 8 | |||
| Gate Threshold Voltage (VGS(th)) | V | VGS=VDS , ID =250uA | 2 | 4 | |||
| Drain-Source Leakage Current (IDSS) | uA | VDS=80V , VGS=0V , TJ=25 | 1 | ||||
| Drain-Source Leakage Current (IDSS) | uA | VDS=80V , VGS=0V , TJ=55 | 5 | ||||
| Gate-Source Leakage Current (IGSS) | nA | VGS=20V , VDS=0V | 100 | ||||
| Forward Transconductance (gfs) | S | VDS=5V , ID=20A | 80 | ||||
| Total Gate Charge (Qg) | nC | VDS=50V , VGS=10V , ID=13.5A | 45 | ||||
| Total Gate Charge (Qg) | nC | VDS=50V , VGS=4.5V , ID=13.5A | 19.3 | ||||
| Gate-Source Charge (Qgs) | nC | 9.5 | |||||
| Gate-Drain Charge (Qgd) | nC | 4.8 | |||||
| Turn-On Delay Time (Td(on)) | ns | VDD=50V , VGS=10V , RG=3, ID=13.5A | 10 | ||||
| Rise Time (Tr) | ns | 6.5 | |||||
| Turn-Off Delay Time (Td(off)) | ns | 45 | |||||
| Fall Time (Tf) | ns | 7.5 | |||||
| Input Capacitance (Ciss) | pF | VDS=50V , VGS=0V , f=1MHz | 3140 | ||||
| Output Capacitance (Coss) | pF | 695 | |||||
| Reverse Transfer Capacitance (Crss) | pF | 25 | |||||
| Continuous Source Current (IS) | A | VG=VD=0V , Force Current | 48 | ||||
| Diode Forward Voltage (VSD) | V | VGS=0V , IS=1A , TJ=25 | 1.1 | ||||
| Reverse Recovery Time (trr) | nS | IF=13.5A , di/dt=100A/s , TJ=25 | 33 | ||||
| Reverse Recovery Charge (Qrr) | nC | 150 | |||||
| Thermal Resistance Junction-Ambient (RJA) | /W | 1(t10s) | 25 | ||||
| Thermal Resistance Junction-Ambient (RJA) | /W | 1 | 55 | ||||
| Thermal Resistance Junction-Case (RJC) | /W | 1 | 1.3 |
2504101957_HUASHUO-HSBA0048A_C45385123.pdf
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