Fast Switching Dual N Channel MOSFET HUASHUO HSBA0204 100V for Switching and Hard Switching Circuits
Key Attributes
Model Number:
HSBA0204
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
9.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
37.4pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
21W
Input Capacitance(Ciss):
1.535nF@15V
Gate Charge(Qg):
19.5nC@10V
Mfr. Part #:
HSBA0204
Package:
PRPAK5x6-8L
Product Description
HSBA0204 Dual N-Channel 100V Fast Switching MOSFETs
Product Overview
The HSBA0204 is a dual N-channel MOSFET featuring high cell density trenched technology, designed to deliver excellent RDS(ON) and efficiency. This fast-switching MOSFET is ideal for most low-power switching and load switch applications. It meets RoHS and Green Product requirements with full functional reliability approval.
Applications:
- Portable Equipment
- Battery Powered Systems
- Hard Switching and High-Speed Circuits
Product Attributes
- Brand: HS
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 9.3 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 5.9 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 2.9 | A | |||
| ID@TA=100 | Continuous Drain Current, VGS @ 10V1 | 1.8 | A | |||
| IDM | Pulsed Drain Current2 | 36 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 6.1 | mJ | |||
| IAS | Avalanche Current | 11 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 21 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 63 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=3A | 90 | 112 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=2A | 95 | 120 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -4.57 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | --- | 10 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=2A | 12 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2 | ||
| Qg | Total Gate Charge (10V) | VDS=60V , VGS=10V , ID=2A | 19.5 | --- | nC | |
| Qgs | Gate-Source Charge | 3.2 | --- | |||
| Qgd | Gate-Drain Charge | 3.6 | --- | |||
| td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3, ID=1A | 16.2 | --- | ns | |
| tr | Rise Time | 3 | --- | |||
| td(off) | Turn-Off Delay Time | 44 | --- | |||
| tf | Fall Time | 2.6 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1535 | --- | pF | |
| Coss | Output Capacitance | 60 | --- | |||
| Crss | Reverse Transfer Capacitance | 37.4 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 9 | A | |
| ISM | Pulsed Source Current2,5 | --- | 18 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Notes:
1: Tested on a surface-mounted 1 inch2 FR-4 board with 2OZ copper.
2: Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3: EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=11A.
4: Power dissipation is limited by 175 junction temperature.
5: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121655_HUASHUO-HSBA0204_C5341693.pdf
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