Power switching mosfet HUAYI HY19P03B featuring low resistance and high current for power management
Key Attributes
Model Number:
HY19P03B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
323pF
Number:
1 P-Channel
Output Capacitance(Coss):
461pF
Input Capacitance(Ciss):
4.787nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
HY19P03B
Package:
TO-263-2L
Product Description
Product Overview
The HY19P03P/B is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a high continuous drain current of -90A and low on-state resistance (RDS(ON)) of 4.7m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available.
Product Attributes
- Brand: HYMEXA
- Origin: China (Xi'an Huayi Microelectronics Co., Ltd.)
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | -30 | V | ||
| VGSS | 20 | V | ||||
| TJ | -55 | 150 | C | |||
| TSTG | -55 | 150 | C | |||
| ID | Tc=25C | -90 | A | |||
| Electrical Characteristics | BVDSS | VGS=0V,IDS=-250uA | -30 | V | ||
| IDSS | VDS=-30V, VGS=0V | -1 | uA | |||
| VGS(th) | VDS=VGS, IDS=-250uA | -1.0 | -1.7 | -3.0 | V | |
| On-State Resistance | RDS(ON) | VGS=-10V,ID= -45A | 4.7 | 6 | m | |
| RDS(ON) | VGS=-4.5V,ID= -45A | 6.5 | 8 | m | ||
| Diode Characteristics | VSD | ISD= -45A,VGS=0V | -0.82 | -1.3 | V | |
| trr | ISD= -45A,dI/dt=100A/us | 40 | ns | |||
| Dynamic Characteristics | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4787 | pF | ||
| Coss | 461 | pF | ||||
| Crss | 323 | pF | ||||
| Gate Charge Characteristics | Qg | VDS = -24V, VGS= -10V ID= -45A | 90 | nC | ||
| Qgs | 7.8 | |||||
| Qgd | 19.3 | |||||
| RG | VGS=0V,VDS=0V, Frequency=1.0MHz | 1.84 |
2410121916_HUAYI-HY19P03B_C410273.pdf
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