Fast Switching Dual N Channel MOSFET HUASHUO HSBA6256 60V Device for DC DC Converters and Motor Control
Key Attributes
Model Number:
HSBA6256
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
2 N-Channel
Output Capacitance(Coss):
478pF
Input Capacitance(Ciss):
1.27nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
HSBA6256
Package:
PRPAK5x6-8L
Product Description
HSBA6256 Dual N-Channel 60V Fast Switching MOSFETs
The HSBA6256 is a dual N-channel MOSFET designed for fast switching applications. It features advanced Trench MOS Technology, low gate charge, and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. The device is 100% EAS guaranteed and a green device is available.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: Dual N-Channel MOSFET
- Availability: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current (ID@TC=25) | 50 | A | |||
| Continuous Drain Current (ID@TC=100) | 35 | A | |||
| Pulsed Drain Current (IDM) | 200 | A | |||
| Single Pulse Avalanche Energy (EAS) | 26.5 | mJ | |||
| Avalanche Current (IAS) | 15 | A | |||
| Total Power Dissipation (PD@TC=25) | 50 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | --- | 60 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 2.5 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=10V , ID=15A | --- | 10 | 12 | m |
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=4.5V , ID=15A | --- | 14 | 16 | m |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.3 | --- | |
| Total Gate Charge (Qg) (4.5V) | VDS=30V , VGS=10V , ID=15A | --- | 15 | --- | nC |
| Gate-Source Charge (Qgs) | --- | 3.5 | --- | nC | |
| Gate-Drain Charge (Qgd) | --- | 4.2 | --- | nC | |
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=15A | --- | 7 | --- | ns |
| Rise Time (Tr) | --- | 4.5 | --- | ns | |
| Turn-Off Delay Time (Td(off)) | --- | 26 | --- | ns | |
| Fall Time (Tf) | --- | 5 | --- | ns | |
| Input Capacitance (Ciss) | VDS=30V , VGS=0V , f=1MHz | --- | 1270 | --- | pF |
| Output Capacitance (Coss) | --- | 478 | --- | pF | |
| Reverse Transfer Capacitance (Crss) | --- | 40 | --- | pF | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 50 | A |
| Pulsed Source Current (ISM) | --- | --- | 200 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=A , TJ=25 | --- | --- | 1.2 | V |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | --- | 22 | --- | nS |
| Reverse Recovery Charge (Qrr) | --- | 72 | --- | nC |
Applications
- Motor Control
- DC/DC Converter
- Synchronous rectifier applications
2506251651_HUASHUO-HSBA6256_C28314521.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
