40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON for buck converters
Key Attributes
Model Number:
HSCE4117
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
8.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.65V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
225pF
Number:
1 P-Channel
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
3.67nF
Output Capacitance(Coss):
313pF
Gate Charge(Qg):
59nC@10V
Mfr. Part #:
HSCE4117
Package:
DFN-8(3.3x3.3)
Product Description
Product Overview
The HSCE4117 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Technology: Trench P-channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -50 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -39 | A | |||
| IDM | Pulsed Drain Current | -200 | A | |||
| EAS | Single Pulse Avalanche Energy | 360 | mJ | |||
| IAS | Avalanche Current | -56 | A | |||
| PD@TC=25 | Total Power Dissipation | 52 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case | 2.4 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | V | ||
| RDS(ON),typ | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | 8.2 | 10 | m | |
| RDS(ON),typ | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | 10.5 | 12.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.65 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-10A | 48 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 10.6 | |||
| Qg | Total Gate Charge | VDS=-20V , VGS=-10V , ID=-10A | 59 | nC | ||
| Qgs | Gate-Source Charge | 8.7 | ||||
| Qgd | Gate-Drain Charge | 15 | ||||
| Td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3.3, ID=-10A | 16 | ns | ||
| Tr | Rise Time | 42 | ns | |||
| Td(off) | Turn-Off Delay Time | 170 | ns | |||
| Tf | Fall Time | 96 | ns | |||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | 3670 | pF | ||
| Coss | Output Capacitance | 313 | pF | |||
| Crss | Reverse Transfer Capacitance | 225 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -50 | A | ||
| ISM | Pulsed Source Current | -200 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | If=20A,dI/dt=100A/us | 15 | ns | ||
| Qrr | Reverse Recovery Charge | If=20A,dI/dt=100A/us | 4.7 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSCE4117 | DFN3.3*3.3 | 3000/Tape&Reel | ||||
2508281825_HUASHUO-HSCE4117_C51025846.pdf
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