P channel 30V fast switching MOSFET HUASHUO HSBA3115 with super low gate charge and trench technology
Key Attributes
Model Number:
HSBA3115
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
59A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.8mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
421pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.448nF@15V
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
33nC@4.5V
Mfr. Part #:
HSBA3115
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3115 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Product Series: HSBA3115
- Technology: Trench MOSFET
- Channel Type: P-Channel
- Certifications: RoHS, Green Product
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±25 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -59 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -37 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -18 | -11.6 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -14.6 | -9.3 | A | ||
| IDM | Pulsed Drain Current2 | -180 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 153 | mJ | |||
| IAS | Avalanche Current | -55.4 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 5 | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 10s Steady State | 62 | /W | ||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 25 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 2.4 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.018 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 7.8 | 9.8 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-15A | 11 | 15 | V | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 5.04 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | 1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | 5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-30A | 26.4 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-15A | 33 | nC | ||
| Qgs | Gate-Source Charge | 10.7 | ||||
| Qgd | Gate-Drain Charge | 12.8 | ||||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-15A | 8 | ns | ||
| tr | Rise Time | 17.8 | ||||
| td(off) | Turn-Off Delay Time | 78.4 | ||||
| tf | Fall Time | 43.6 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3448 | pF | ||
| Coss | Output Capacitance | 508 | ||||
| Crss | Reverse Transfer Capacitance | 421 | ||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -59 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/µs , TJ=25 | 29 | nS | ||
| Qrr | Reverse Recovery Charge | 15 | nC |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-55.4A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3115 | PRPAK5*6 | 3000/Tape&Reel |
2410121456_HUASHUO-HSBA3115_C701055.pdf
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