Low On Resistance Single N Channel MOSFET HUAYI HYG012N03LR1C2 for Battery Protection and Load Switch
Key Attributes
Model Number:
HYG012N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.3mΩ@4.5V,40A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
8.108nF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
196.9nC@10V
Mfr. Part #:
HYG012N03LR1C2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The HYG012N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance, high continuous drain current capability, and is 100% avalanche tested for reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Product Name | Feature | Application | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) @ VGS=10V (m) | RDS(ON) @ VGS=4.5V (m) | Package Type |
| HYG012N03LR1C2 | Single N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged | Load Switch, Battery Protection | 30 | 180 (Tc=25) | 0.9 (typ.) | 1.3 (typ.) | PDFN8L(5x6) |
2410122028_HUAYI-HYG012N03LR1C2_C5121296.pdf
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