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quality N Channel MOSFET HUASHUO HSBB0096 Featuring 100V Drain Source Voltage and Fast Switching Performance factory
quality N Channel MOSFET HUASHUO HSBB0096 Featuring 100V Drain Source Voltage and Fast Switching Performance factory

N Channel MOSFET HUASHUO HSBB0096 Featuring 100V Drain Source Voltage and Fast Switching Performance

Key Attributes
Model Number: HSBB0096
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
11mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
495pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.41nF
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
HSBB0096
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB0096 is a N-Channel 100V Fast Switching MOSFET designed using SGT technology. It offers excellent Rds(on), low gate charge, and fast switching characteristics, making it suitable for a wide variety of applications. Key features include 100% EAS Guaranteed, low RDS(ON), low Gate Charge, and RoHS and Halogen-Free compliance. This device is designed for applications requiring efficient and rapid switching.

Product Attributes

  • Brand: HS-Semi
  • Technology: SGT (Silicon Gate Technology)
  • Channel Type: N-Channel
  • Compliance: RoHS and Halogen-Free

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current 50 A
ID@TC=100 Continuous Drain Current 30 A
IDM Pulsed Drain Current 200 A
EAS Single Pulse Avalanche Energy 90 mJ
PD@TC=25 Total Power Dissipation 45 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 55 /W
RJC Thermal Resistance Junction-Case --- 2.8 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A 9 11 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=10A 12 14 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=20A 26 --- nC
Qgs Gate-Source Charge 4.3 --- nC
Qgd Gate-Drain Charge 6.7 --- nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3, ID=20A 7.5 --- ns
Tr Rise Time 14 --- ns
Td(off) Turn-Off Delay Time 31 --- ns
Tf Fall Time 26 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 1410 --- pF
Coss Output Capacitance 495 --- pF
Crss Reverse Transfer Capacitance 16 --- pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current --- 50 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=20A , di/dt=100A/s , TJ=25 43 --- nS
Qrr Reverse Recovery Charge 35 --- nC
Ordering Information
Part Number Package code Packaging
HSBB0096 PRPAK3*3 3000/Tape&Reel

2411061706_HUASHUO-HSBB0096_C42376798.pdf

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