Robust Switching MOSFET HUAYI HYG065N07NS1P with 2990 Picofarad Input Capacitance and Low On Resistance
Key Attributes
Model Number:
HYG065N07NS1P
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.99nF@25V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HYG065N07NS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.5 m (typ.) at VGS = 10V, 70V/100A rating, and 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @ Tc=25C | RDS(ON) (m) @ VGS=10V | EAS (mJ) @ L=0.3mH | BVDSS (V) | VGS(th) (V) | Ciss (pF) | td(ON) (ns) | Qg (nC) |
| HYG065N07NS1P/B | TO-220FB-3L | 70 | 100 | 5.5 (typ.) | 223 | 70 | 2-4 | 2990 | 15 | 52 |
| HYG065N07NS1P/B | TO-263-2L | 70 | 100 | 5.5 (typ.) | 223 | 70 | 2-4 | 2990 | 15 | 52 |
2410121248_HUAYI-HYG065N07NS1P_C2827242.pdf
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