Trench Technology N Channel MOSFET HUASHUO HSU28N15 With Super Low Gate Charge And High Cell Density
Key Attributes
Model Number:
HSU28N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
46mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
115W
Input Capacitance(Ciss):
3.755nF@25V
Gate Charge(Qg):
40nC@4.5V
Mfr. Part #:
HSU28N15
Package:
TO-252-2
Product Description
Product Overview
The HSU28N15 is a high-performance trench N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge characteristics. It is designed for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, green device availability, and excellent Cdv/dt effect decline, leveraging advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU28N15 | Drain-Source Voltage (VDS) | 150 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 30 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 22 | A | |||
| Pulsed Drain Current (IDM) | 60 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 216 | mJ | ||||
| Avalanche Current (IAS) | 38 | A | ||||
| Total Power Dissipation (PD@TC=25) | 115 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 175 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 175 | ||||
| Thermal Resistance Junction-ambient (RJA) | 55 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1.3 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | 35 | 46 | m | ||
| VGS=4.5V , ID=20A | 37 | 50 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=25 | 1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=20A | 55 | S | |||
| Total Gate Charge (Qg) | VDS=75V , VGS=4.5V , ID=10A | 40 | nC | |||
| Gate-Source Charge (Qgs) | 10 | nC | ||||
| Gate-Drain Charge (Qgd) | 21 | nC | ||||
| Turn-On Delay Time (td(on)) | VDD=50V , VGS=4.5V , RG=3.3, ID=10A | 18 | ns | |||
| Rise Time (tr) | 20 | ns | ||||
| Turn-Off Delay Time (td(off)) | 65 | ns | ||||
| Fall Time (tf) | 15 | ns | ||||
| Input Capacitance (Ciss) | VDS=25V , VGS=0V , f=1MHz | 3755 | pF | |||
| Output Capacitance (Coss) | 207 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 160 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 30 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=10A , dI/dt=100A/s , TJ=25 | 35 | nS | |||
| Reverse Recovery Charge (Qrr) | 120 | nC |
| Package | Packaging | Quantity |
|---|---|---|
| TO252-2 | Tape&Reel | 2500 |
2410121653_HUASHUO-HSU28N15_C2903560.pdf
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