Electronic circuit components featuring huayi hy1001d mosfets and diodes in various package types for power management

Key Attributes
Model Number: HY1001D
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
70A
RDS(on):
8.6mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
1 N-channel
Output Capacitance(Coss):
285pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
4.2nF
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
HY1001D
Package:
TO-252-2L
Product Description

Product Overview

This document details various semiconductor components, including MOSFETs and diodes, presented in different package types such as TO-251-3S, TO-252-2L, TO-251-3L, and others. It provides pin configurations (S, G, D) and outlines technical specifications for these components, likely intended for use in electronic circuits and power management applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Package TypePin ConfigurationPart NumberDescription
TO-251-3SS G DTO-251-3STO-251-3L
TO-252-2LS G DTO-252-2LTO-251-3L
TO-251-3LS G DTO-251-3L
ParameterValue
VDSNot specified
IDNot specified
RDS(ON)Not specified
VGS(th)Not specified
QgNot specified
CissNot specified
CossNot specified
CrssNot specified
trNot specified
tfNot specified
td(on)Not specified
td(off)Not specified
RthJCNot specified
PackageTO-251-3S, TO-252-2L, TO-251-3L

2410010002_HUAYI-HY1001D_C2983279.pdf

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