High cell density trenched p channel mosfet HUASHUO HSBB3103 for synchronous buck converter performance
Key Attributes
Model Number:
HSBB3103
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
158pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.345nF@15V
Pd - Power Dissipation:
29W
Gate Charge(Qg):
12.5nC@4.5V
Mfr. Part #:
HSBB3103
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3103 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key advantages include a super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Line: HSBB Series
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±25 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -32 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -20 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -12.2 | -7.7 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -9.8 | -6.2 | A | ||
| IDM | Pulsed Drain Current2 | -65 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 72.2 | mJ | |||
| IAS | Avalanche Current | -38 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 29 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 4.2 | 1.67 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 75 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 30 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 4.32 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.022 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-15A | 20 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-10A | 32 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.6 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-15A | 19 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 13 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-15A | 12.5 | nC | ||
| Qgs | Gate-Source Charge | 5.4 | nC | |||
| Qgd | Gate-Drain Charge | 5 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-15A | 4.4 | ns | ||
| tr | Rise Time | 11.2 | ns | |||
| td(off) | Turn-Off Delay Time | 34 | ns | |||
| tf | Fall Time | 18 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 1345 | pF | ||
| Coss | Output Capacitance | 194 | pF | |||
| Crss | Reverse Transfer Capacitance | 158 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -32 | A | ||
| ISM | Pulsed Source Current2,5 | -65 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/µs , TJ=25 | 12.4 | nS | ||
| Qrr | Reverse Recovery Charge | 5 | nC | |||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB3103 | PRPAK3*3 | 3000/Tape&Reel | ||||
2409291134_HUASHUO-HSBB3103_C508818.pdf
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