switching MOSFET HUASHUO HSS1N20 featuring super low gate charge and excellent switching performance
Key Attributes
Model Number:
HSS1N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
1A
RDS(on):
1.9Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
3pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
145pF@25V
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
HSS1N20
Package:
SOT-23L
Product Description
Product Overview
The HSS1N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key features include super low gate charge and excellent Cdv/dt effect decline, benefiting from advanced high cell density trench technology.Product Attributes
- Brand: HSS
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 1 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 0.8 | A | |||
| IDM | Pulsed Drain Current2 | 6 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.71 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 125 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | V | ||
| RDS(ON),Max | Static Drain-Source On-Resistance2 | VGS=10V , ID=1A | 1.65 | 1.9 | Ω | |
| VGS=4.5V , ID=0.8A | 1.85 | 2.2 | Ω | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=200V , VGS=0V , TJ=25 | 1 | µA | ||
| VDS=200V , VGS=0V , TJ=55 | 5 | µA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge (10V) | VDS=100V , VGS=10V , ID=1A | 12 | nC | ||
| Qgs | Gate-Source Charge | 2.3 | ||||
| Qgd | Gate-Drain Charge | 3.8 | ||||
| Td(on) | Turn-On Delay Time | VDD=100V , VGS=10V , RG=2.5Ω ID=1A | 9 | ns | ||
| Tr | Rise Time | 11 | ns | |||
| Td(off) | Turn-Off Delay Time | 14 | ns | |||
| Tf | Fall Time | 12 | ns | |||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 145 | pF | ||
| Coss | Output Capacitance | 88 | pF | |||
| Crss | Reverse Transfer Capacitance | 3 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 1 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr | Reverse Recovery Time | IF=1A , dI/dt=100A/µs , TJ=25 | 38 | ns | ||
| Qrr | Reverse Recovery Charge | 20 | nC | |||
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS1N20 | SOT-23L | 3000/Tape&Reel |
2410121532_HUASHUO-HSS1N20_C845589.pdf
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