Power transistor HUAYI HYG023N04LS1P N Channel MOSFET 40V 170A low on resistance for power devices
Key Attributes
Model Number:
HYG023N04LS1P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
170A
RDS(on):
2.9mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Output Capacitance(Coss):
809pF
Input Capacitance(Ciss):
4.032nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
58.7nC@10V
Mfr. Part #:
HYG023N04LS1P
Package:
TO-220FB
Product Description
Product Overview
The HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a 40V/170A rating with low on-resistance (RDS(ON) = 2.1 m typ. @VGS = 10V) and is 100% avalanche tested for reliability and ruggedness. This device is available in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Parameter | Conditions | Value | Unit | ||
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature (TJ) | -55 to 175 | C | |||
| Storage Temperature (TSTG) | -55 to 175 | C | |||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | 170 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 570 | A | ||
| Continuous Drain Current (ID) | Tc=25C | 170 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 120 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 150 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 75 | W | ||
| Thermal Resistance (RJC) | Junction-to-Case | 1.0 | C/W | ||
| Thermal Resistance (RJA) | Junction-to-Ambient** | 62.5 | C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 450** | mJ | ||
| Electrical Characteristics (Static) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS= 250A | 40 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=40V,VGS=0V | - | 1 | A | |
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | - | 50 | A | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS= 250A | 1.9 | 3 | V | |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 10V,IDS= 40A | 2.1 | 2.6 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS= 4.5V,IDS= 40A | 2.9 | 3.5 | m | |
| Diode Characteristics | |||||
| Diode Forward Voltage (VSD) | ISD=40A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | - | 33.3 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 29.5 | - | nC | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | - | 2 | - | |
| Input Capacitance (Ciss) | VGS=0V, VDS= 25V, Frequency=1MHz | - | 4032 | - | pF |
| Output Capacitance (Coss) | - | 809 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 45 | - | pF | |
| Turn-on Delay Time (td(ON)) | VDD= 20V,RG=4, IDS=20A,VGS= 10V | - | 14 | - | ns |
| Turn-on Rise Time (Tr) | - | 49 | - | ns | |
| Turn-off Delay Time (td(OFF)) | - | 42 | - | ns | |
| Turn-off Fall Time (Tf) | - | 43 | - | ns | |
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS = 32V, VGS= 10V, IDs= 20A | - | 58.7 | - | nC |
| Total Gate Charge (Qg) | VGS=4.5V | - | 27.4 | - | nC |
| Gate-Source Charge (Qgs) | - | 15.1 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 9.3 | - | nC | |
| Applications | |||||
| Power Management for DC/DC | |||||
| Ordering and Marking Information | |||||
| Package Code | P | TO-220FB-3L | |||
| Package Code | B | TO-263-2L | |||
| Device | HYG023N04LS1P/B | ||||
2409302203_HUAYI-HYG023N04LS1P_C2895306.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
