N Channel MOSFET HUASHUO HSBA4054 40V Fast Switching Device for Or ing and Synchronous Rectification
Key Attributes
Model Number:
HSBA4054
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
49A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
493pF
Input Capacitance(Ciss):
950pF
Pd - Power Dissipation:
22W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HSBA4054
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4054 is a N-Channel 40V Fast Switching MOSFET designed with Advanced Trench Technology. It offers low gate charge and is 100% UIS Tested, making it suitable for high-efficiency applications. Key benefits include fast switching capabilities and robust performance. This MOSFET is ideal for Synchronous Rectification in SMPS, DC/DC Converters, and Or-ing applications.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench Technology
- Testing: 100% UIS Tested
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA4054 | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | 49 | A | ||||
| Continuous Drain Current (ID@TC=100) | 29 | A | ||||
| Pulsed Drain Current (IDM) | 90 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 68 | mJ | ||||
| Avalanche Current (IAS) | 37 | A | ||||
| Total Power Dissipation (PD@TC=25) | 22 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | (Steady State) | --- | 65 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 6 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V | |
| HSBA4054 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | 4.7 | 6.5 | m | |
| VGS=4.5V , ID=15A | 7.5 | 10.5 | m | |||
| HSBA4054 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.9 | 2.2 | V |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| HSBA4054 | VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | ||
| HSBA4054 | Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | 100 | nA | |
| HSBA4054 | Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.9 | --- | ||
| HSBA4054 | Total Gate Charge (Qg) | VDS=20V , VGS=10V , ID=15A | 20 | --- | nC | |
| Gate-Source Charge (Qgs) | 3.5 | --- | nC | |||
| Gate-Drain Charge (Qgd) | 4.2 | --- | nC | |||
| HSBA4054 | Turn-On Delay Time (Td(on)) | VDD=20V , VGS=10V , RG=3 , ID=15A | 12 | --- | ns | |
| Rise Time (Tr) | 9.6 | --- | ns | |||
| Turn-Off Delay Time (Td(off)) | 21 | --- | ns | |||
| Fall Time (Tf) | 16 | --- | ns | |||
| HSBA4054 | Input Capacitance (Ciss) | VDS=20V , VGS=0V , f=1MHz | 950 | --- | pF | |
| Output Capacitance (Coss) | 493 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | 48 | --- | pF | |||
| HSBA4054 | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 45 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V |
Notes:
- 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=37A.
- 4. Power dissipation is limited by 150 junction temperature.
- 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA4054 | PRPAK5*6 | 3000/Tape&Reel |
2410121452_HUASHUO-HSBA4054_C22359239.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
