Fast Switching MOSFET HUASHUO HSM4P10D Dual P Channel with Low Gate Charge and Electrical Properties
Key Attributes
Model Number:
HSM4P10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
36pF
Number:
2 P-Channel
Input Capacitance(Ciss):
1.07nF@50V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
HSM4P10D
Package:
SOP-8
Product Description
Product Overview
The HSM4P10D is a DUAL P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: DUAL P-Ch MOSFET
- Certifications: RoHS, Green Product Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| HSM4P10D DUAL P-Ch 100V Fast Switching MOSFETs | ||||||
|---|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -4 | A | |||
| ID@TA=100 | Continuous Drain Current, VGS @ -10V1 | -3.2 | A | |||
| IDM | Pulsed Drain Current2 | -16 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 40 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-4A | 105 | 150 | m | |
| VGS=-4.5V , ID=-3A | --- | 115 | 180 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-100V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Qg | Total Gate Charge | VDS=-50V , VGS=-10V , ID=-4A | 17 | --- | nC | |
| Qgs | Gate-Source Charge | 5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 7 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-50V , VGS=-10V , RG=3.3, ID=-4A | 9 | --- | ns | |
| Tr | Rise Time | 15 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 69 | --- | ns | ||
| Tf | Fall Time | 23 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-50V , VGS=0V , f=1MHz | 1070 | --- | pF | |
| Coss | Output Capacitance | 69 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 36 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -4 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM4P10D | SOP-8 | 4000/Tape&Reel |
2410122027_HUASHUO-HSM4P10D_C28314512.pdf
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