N Channel MOSFET HUASHUO HSBB15N15S Featuring 150V Drain Source Voltage and Trench Technology Design
Key Attributes
Model Number:
HSBB15N15S
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
35mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.09nF@75V
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
HSBB15N15S
Package:
PRPAK3x3-8
Product Description
Product Overview
The HSBB15N15S is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. It utilizes an advanced high cell density Trench technology, offering excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 15 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 9 | A | |||
| IDM | Pulsed Drain Current2 | 60 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 53 | mJ | |||
| IAS | Avalanche Current | 18 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 45 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.8 | /W | ||
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | --- | --- | V |
| RDS(ON),typ | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | 35 | 56 | m | |
| RDS(ON),typ | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=10A | 41 | 68 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=120V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=10A | 33 | --- | S | |
| Qg | Total Gate Charge | VDS=75V , VGS=4.5V , ID=10A | 19 | --- | nC | |
| Qgs | Gate-Source Charge | 4.5 | --- | |||
| Qgd | Gate-Drain Charge | 2.6 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=75V , VGS=10V , RG=3.3 ID=10A | 13 | --- | ns | |
| Tr | Rise Time | 8.2 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 25 | --- | ns | ||
| Tf | Fall Time | 11 | --- | ns | ||
| Ciss | Input Capacitance | VDS=75V , VGS=0V , f=1MHz | 1090 | --- | pF | |
| Coss | Output Capacitance | 93 | --- | |||
| Crss | Reverse Transfer Capacitance | 6 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 15 | A | |
| ISM | Pulsed Source Current2,5 | --- | 60 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=10A , dI/dt=100A/s , TJ=25 | 37 | --- | ns | |
| Qrr | Reverse Recovery Charge | 263 | --- | nC | ||
Notes:
- 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Tested by pulsed, pulse width 300s, duty cycle 2%.
- 3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.3mH, IAS=18A.
- 4 Power dissipation is limited by 150 junction temperature.
- 5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB15N15S | PRPAK3*3 | 3000/Tape&Reel |
2410121656_HUASHUO-HSBB15N15S_C7543693.pdf
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