High Cell Density Trenched P Channel MOSFET HUASHUO HSU6113 Suitable for Switching Applications
Key Attributes
Model Number:
HSU6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
132mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF@15V
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSU6113
Package:
TO-252-2
Product Description
Product Overview
The HSU6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU6113 | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) | VGS @ -10V, TC=25 | -13 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TC=100 | -8.3 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TA=25 | -3.3 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TA=70 | -2.7 | A | |||
| Pulsed Drain Current (IDM) | -26 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 29.8 | mJ | ||||
| Avalanche Current (IAS) | 24.4 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 31.3 | W | |||
| Total Power Dissipation (PD) | TA=25 | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 4 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | |||
| Electrical Characteristics | Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-10A | 90 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | |||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | -13 | A | ||
| Pulsed Source Current (ISM) | -26 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1 | V | |||
| Total Gate Charge (Qg) | VDS=-12V , VGS=-4.5V , ID=-6A | 11.8 | nC |
| Package Code | Packaging | Quantity |
|---|---|---|
| TO252-2 | Tape&Reel | 2500 |
2410121455_HUASHUO-HSU6113_C508798.pdf
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