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quality Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability factory
quality Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability factory
quality Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability factory
quality Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability factory

Power Management N Channel MOSFET HUASHUO HSBA4050 Featuring 40V Voltage and High Current Capability

Key Attributes
Model Number: HSBA4050
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
140A
RDS(on):
2.6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.572nF@20V
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HSBA4050
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA4050 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 40V drain-source voltage and high current capability, it is ideal for synchronous rectification in SMPS, DC/DC converters, and OR-ing applications. Its advanced trench technology, low gate charge, and RoHS and Halogen-Free compliance make it a reliable choice for demanding power management solutions.

Product Attributes

  • Brand: HS-Semi
  • Model: HSBA4050
  • Channel Type: N-Channel
  • Voltage Rating: 40V
  • Technology: Advanced Trench Technology
  • Compliance: RoHS and Halogen-Free
  • Package Type: PRPAK5X6

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 140 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 90 A
IDM Pulsed Drain Current 560 A
EAS Single Pulse Avalanche Energy 380 mJ
IAS Avalanche Current 50 A
PD@TC=25 Total Power Dissipation 100 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 55 /W
RJC Thermal Resistance Junction-Case --- 1.3 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance VGS=10V , ID=20A 1.6 1.8 m
RDS(ON),typ Static Drain-Source On-Resistance VGS=4.5V , ID=20A 2.2 2.6 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V
IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=20A 61 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.9 ---
Qg Total Gate Charge VDS=15V , VGS=10V , ID=20A 52 --- nC
Qgs Gate-Source Charge 11 ---
Qgd Gate-Drain Charge 7.5 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3, ID=20A 16 --- ns
Tr Rise Time 7.5 --- ns
Td(off) Turn-Off Delay Time 48 --- ns
Tf Fall Time 13.6 --- ns
Ciss Input Capacitance VDS=20V , VGS=0V , f=1MHz 3572 --- pF
Coss Output Capacitance 1719 --- pF
Crss Reverse Transfer Capacitance 102 --- pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current --- 140 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 44 --- nS
Qrr Reverse Recovery Charge 33 --- nC

2411061707_HUASHUO-HSBA4050_C42376803.pdf

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