synchronous buck converter MOSFET HUASHUO HSBB3105 with low gate charge and high cell density design
Key Attributes
Model Number:
HSBB3105
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
237pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.215nF@15V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
22nC@4.5V
Mfr. Part #:
HSBB3105
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3105 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures superior performance, including excellent CdV/dt effect decline. The HSBB3105 is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Line: HSBB
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -42 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -27 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -14.3 | -9 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -11.4 | -7.2 | A | ||
| IDM | Pulsed Drain Current2 | -130 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 125 | mJ | |||
| IAS | Avalanche Current | -50 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 37 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 4.2 | 1.67 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 75 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 30 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 3.36 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 11 | 14 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-15A | 17 | 22 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-30A | 30 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 9 | |||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-15A | 22 | nC | ||
| Qgs | Gate-Source Charge | 8.7 | ||||
| Qgd | Gate-Drain Charge | 7.2 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3 ID=-15A | 8 | ns | ||
| Tr | Rise Time | 73.7 | ||||
| Td(off) | Turn-Off Delay Time | 61.8 | ||||
| Tf | Fall Time | 24.4 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 2215 | pF | ||
| Coss | Output Capacitance | 310 | ||||
| Crss | Reverse Transfer Capacitance | 237 | ||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -25 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/s , TJ=25 | 19 | nS | ||
| Qrr | Reverse Recovery Charge | 9 | nC |
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB3105 | PRPAK3*3 | 3000/Tape&Reel |
2410121517_HUASHUO-HSBB3105_C701039.pdf
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