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quality HSU4016 N Channel 40V MOSFET with Fast Switching Capability and High Cell Density Trenched Technology factory
quality HSU4016 N Channel 40V MOSFET with Fast Switching Capability and High Cell Density Trenched Technology factory

HSU4016 N Channel 40V MOSFET with Fast Switching Capability and High Cell Density Trenched Technology

Key Attributes
Model Number: HSU4016
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
204pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.354nF
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
HSU4016
Package:
TO-252-2
Product Description

Product Overview

The HSU4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full functional reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model N-Ch 40V Fast Switching MOSFETs HSU4016
Absolute Maximum Ratings
Parameter Rating Units
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID@TC=25 (Continuous Drain Current, VGS @ 10V) 75 A
ID@TC=100 (Continuous Drain Current, VGS @ 10V) 58 A
IDM (Pulsed Drain Current) 150 A
EAS (Single Pulse Avalanche Energy) 110.5 mJ
IAS (Avalanche Current) 47 A
PD@TC=25 (Total Power Dissipation) 52.1 W
TSTG (Storage Temperature Range) -55 to 150
TJ (Operating Junction Temperature Range) -55 to 150
Thermal Data
Parameter Conditions Typ. Max. Unit
RJA (Thermal Resistance Junction-Ambient) 1 --- 62 /W
RJC (Thermal Resistance Junction-Case) 1 --- 2.4 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON),max Static Drain-Source On-Resistance VGS=10V , ID=75A --- --- 6.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Qg Total Gate Charge VDS=20V , VGS=4.5V , ID=12A --- 28 --- nC
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3354 --- pF
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 275 --- pF
Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- 204 --- pF
Diode Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
IS Continuous Source Current VG=VD=0V , Force Current --- --- 75 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1 V
Ordering Information
Part Number Package code Packaging
HSU4016 TO252-2 2500/Tape&Reel

2410121516_HUASHUO-HSU4016_C508792.pdf
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