Low gate charge N Channel MOSFET HUASHUO HSBA0096 designed for and robust performance in electronics
Key Attributes
Model Number:
HSBA0096
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
RDS(on):
14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
495pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
1.41nF
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
HSBA0096
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0096 is a fast-switching N-Channel MOSFET designed for high-efficiency applications. Leveraging SGT technology, it offers excellent Rds(on), low gate charge, and rapid switching capabilities. This device is suitable for a wide range of applications requiring reliable performance and robust characteristics. Key features include 100% EAS guaranteed, low static drain-source on-resistance, and compliance with RoHS and Halogen-Free standards.
Product Attributes
- Brand: HS-Semi
- Technology: SGT (Silicon Gate Technology)
- Channel Type: N-Channel
- Compliance: RoHS and Halogen-Free
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 70 | A | |||
| ID@TC=100 | Continuous Drain Current | 43 | A | |||
| IDM | Pulsed Drain Current | 280 | A | |||
| EAS | Single Pulse Avalanche Energy | 90 | mJ | |||
| PD@TC=25 | Total Power Dissipation | 65 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 50 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 2.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | 8.7 | 11 | m | |
| VGS=4.5V , ID=10A | 11 | 14 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=100V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=20A | 26 | --- | nC | |
| Qgs | Gate-Source Charge | 4.3 | --- | nC | ||
| Qgd | Gate-Drain Charge | 6.7 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.3, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 14 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 31 | --- | ns | ||
| Tf | Fall Time | 26 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 1410 | --- | pF | |
| Coss | Output Capacitance | 495 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 16 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 70 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | 43 | --- | nS | |
| Qrr | Reverse Recovery Charge | 35 | --- | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA0096 | PRPAK5*6 | 3000/Tape&Reel | ||||
2411061707_HUASHUO-HSBA0096_C42376805.pdf
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