High cell density trenched P channel MOSFET HUASHUO HSS2333 optimized for synchronous buck converter
Key Attributes
Model Number:
HSS2333
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
589pF
Number:
1 P-Channel
Output Capacitance(Coss):
680pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
35nC@4.5V
Mfr. Part #:
HSS2333
Package:
SOT-23L
Product Description
Product Overview
The HSS2333 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HSS (implied by URL and part number prefix)
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -12 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -6.8 | A | |||
| IDM | Pulsed Drain Current2 | -32 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 100 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -12 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-8A | 15.3 | 18 | m | |
| VGS=-2.5V , ID=-6A | 20.8 | 28 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -0.68 | -1.2 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-12V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-12V , VGS=0V , TJ=55 | -5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-8A | 5 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-6V , VGS=-4.5V , ID=-5A | 35 | nC | ||
| Qgs | Gate-Source Charge | 5 | ||||
| Qgd | Gate-Drain Charge | 10 | ||||
| td(on) | Turn-On Delay Time | VDD=-6V , VGS=-4.5V , RG=3.3, ID=-5A | 11 | ns | ||
| tr | Rise Time | 33 | ||||
| td(off) | Turn-Off Delay Time | 31 | ||||
| tf | Fall Time | 10 | ||||
| Ciss | Input Capacitance | VDS=-6V , VGS=0V , f=1MHz | 2700 | pF | ||
| Coss | Output Capacitance | 680 | ||||
| Crss | Reverse Transfer Capacitance | 589 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -8 | A | ||
| ISM | Pulsed Source Current2,4 | -32 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSS2333 | SOT-23 | Tape&Reel | 3000 |
2410121532_HUASHUO-HSS2333_C845590.pdf
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