HYG400N15NS1P N Channel MOSFET Offering 150V Drain Source Voltage and 40A Continuous Drain Current
Key Attributes
Model Number:
HYG400N15NS1P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
40A
RDS(on):
34mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
2.14nF
Pd - Power Dissipation:
115W
Mfr. Part #:
HYG400N15NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG400N15NS1P&B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a 150V/40A rating with a low on-resistance of 34m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Feature | Rating | Unit | Test Conditions |
| HYG400N15NS1P&B | Drain-Source Voltage (VDSS) | 150 | V | VGS=0V |
| Gate-Source Voltage (VGSS) | ±20 | V | ||
| Maximum Junction Temperature (TJ) | 175 | °C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | °C | ||
| Source Current-Continuous (IS) | 40 | A | Tc=25°C, Mounted on Large Heat Sink | |
| Pulsed Drain Current (IDM) | 100 | A | Tc=25°C, pulse width limited by max. junction temperature | |
| Continuous Drain Current (ID) | 40 | A | Tc=25°C | |
| 28 | A | Tc=100°C | ||
| Maximum Power Dissipation (PD) | 115 | W | Tc=25°C | |
| 57.6 | W | Tc=100°C | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 1.3 | °C/W | ||
| Thermal Resistance, Junction-to-Ambient (RθJA) | 62 | °C/W | Surface mounted on FR-4 board | |
| Single Pulsed-Avalanche Energy (EAS) | 134.3 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25°C, VDS=100V, VGS=10V | |
| Drain-Source On-State Resistance (RDS(ON)) | 34 | mΩ | VGS=10V, IDS=20A (Typ.) | |
| 41 | mΩ | VGS=10V, IDS=20A (Max.) | ||
| Diode Forward Voltage (VSD) | 0.87 | V | ISD=20A, VGS=0V (Typ.) | |
| 1.3 | V | ISD=20A, VGS=0V (Max.) | ||
| Reverse Recovery Time (trr) | 64.2 | ns | ISD=20A, dISD/dt=100A/μs (Typ.) | |
| Reverse Recovery Charge (Qrr) | 205.1 | nC | ISD=20A, dISD/dt=100A/μs (Typ.) | |
| Input Capacitance (Ciss) | 2140 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz (Typ.) | |
| Output Capacitance (Coss) | 101 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz (Typ.) | |
| Reverse Transfer Capacitance (Crss) | 2.5 | pF | VGS=0V, VDS=75V, Frequency=1.0MHz (Typ.) | |
| Total Gate Charge (Qg) | 30 | nC | VDS=75V, VGS=10V, ID=20A (Typ.) | |
| Gate-Source Charge (Qgs) | 13 | nC | VDS=75V, VGS=10V, ID=20A (Typ.) | |
| Gate-Drain Charge (Qgd) | 4 | nC | VDS=75V, VGS=10V, ID=20A (Typ.) |
2411200118_HUAYI-HYG400N15NS1P_C5121335.pdf
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