synchronous buck converter MOSFET HUASHUO HSBB3052 with excellent CdV dt effect and low gate charge
Key Attributes
Model Number:
HSBB3052
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
814pF
Pd - Power Dissipation:
24W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
HSBB3052
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3052 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. It offers super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 24 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 20 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 15 | A | |||
| IDM | Pulsed Drain Current2 | 100 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 28.8 | mJ | |||
| IAS | Avalanche Current | 24 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 24 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 5.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 5 | 6.3 | m | |
| VGS=4.5V , ID=15A | 6.9 | 9 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=30A | 43 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | 8 | --- | nC | |
| Qgs | Gate-Source Charge | 2.4 | --- | nC | ||
| Qgd | Gate-Drain Charge | 3.2 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | 7.1 | --- | ns | |
| Tr | Rise Time | 40 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 15 | --- | ns | ||
| Tf | Fall Time | 6 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 814 | --- | pF | |
| Coss | Output Capacitance | 498 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 41 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 24 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=15A , di/dt=100A/s , TJ=25 | 34 | --- | nS | |
| Qrr | Reverse Recovery Charge | 15 | --- | nC | ||
2409291036_HUASHUO-HSBB3052_C508824.pdf
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