Power Management MOSFETs HSBA0903 Featuring N Channel and P Channel Fast Switching Capabilities
Key Attributes
Model Number:
HSBA0903
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A;6.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@4.5V,1.6A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
24pF@30V;29pF@30V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
18W
Input Capacitance(Ciss):
66pF@30V;1.229nF@30V
Gate Charge(Qg):
15nC@4.5V;19nC@10V
Mfr. Part #:
HSBA0903
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA0903 series comprises N-Channel and P-Channel Fast Switching MOSFETs designed for efficient power management and DC motor control applications. These devices feature super low gate charge, 100% EAS guarantee, and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology. They are available as Green Devices.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
General Parameters
| Model | Parameter | Rating | Units |
|---|---|---|---|
| HSBA0903 (N-Ch) | Drain-Source Voltage (VDS) | 100 | V |
| HSBA0903 (P-Ch) | Drain-Source Voltage (VDS) | -100 | V |
| HSBA0903 (N-Ch & P-Ch) | Gate-Source Voltage (VGS) | 20 | V |
| HSBA0903 (N-Ch) | Continuous Drain Current, VGS @ 10V (TA=25) | 2.6 | A |
| HSBA0903 (P-Ch) | Continuous Drain Current, VGS @ 10V (TA=25) | -1.8 | A |
| HSBA0903 (N-Ch) | Continuous Drain Current, VGS @ 10V (TA=100) | 1.6 | A |
| HSBA0903 (P-Ch) | Continuous Drain Current, VGS @ 10V (TA=100) | -1.1 | A |
| HSBA0903 (N-Ch) | Continuous Drain Current, VGS @ 10V (TC=25) | 8 | A |
| HSBA0903 (P-Ch) | Continuous Drain Current, VGS @ 10V (TC=25) | -2.1 | A |
| HSBA0903 (N-Ch) | Continuous Drain Current, VGS @ 10V (TC=100) | 4.4 | A |
| HSBA0903 (P-Ch) | Continuous Drain Current, VGS @ 10V (TC=100) | -6.2 | A |
| HSBA0903 (N-Ch) | Pulsed Drain Current (IDM) | 25 | A |
| HSBA0903 (P-Ch) | Pulsed Drain Current (IDM) | -25 | A |
| HSBA0903 (N-Ch) | Single Pulse Avalanche Energy (EAS) | 25 | mJ |
| HSBA0903 (P-Ch) | Single Pulse Avalanche Energy (EAS) | 49 | mJ |
| HSBA0903 (N-Ch) | Avalanche Current (IAS) | 10 | A |
| HSBA0903 (P-Ch) | Avalanche Current (IAS) | -14 | A |
| HSBA0903 (N-Ch & P-Ch) | Total Power Dissipation (PD@TC=25) | 18 | W |
| HSBA0903 (N-Ch & P-Ch) | Storage Temperature Range (TSTG) | -55 to 150 | |
| HSBA0903 (N-Ch & P-Ch) | Operating Junction Temperature Range (TJ) | -55 to 150 |
Thermal Data
| Parameter | Value | Units |
|---|---|---|
| Thermal Resistance Junction-Ambient (RJA) | 85 | /W |
| Thermal Resistance Junction-Case (RJC) | 7 | /W |
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.063 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=2.5A | --- | 80 | 100 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | --- | 90 | 125 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.24 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | --- | --- | 30 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.5 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=50V , VGS=4.5V , ID=2A | --- | 15 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.2 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=1A | --- | 8 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 20 | --- | ns | |
| Tf | Fall Time | --- | 6 | --- | ns | |
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 990 | --- | pF |
| Coss | Output Capacitance | --- | 36 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 24 | --- | pF |
Diode Characteristics (N-Channel)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 2 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.03 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-2A | --- | 180 | 220 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-1.6A | --- | 200 | 255 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.56 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=55 | --- | --- | 30 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 13 | --- | |
| Qg | Total Gate Charge (-10V) | VDS=-50V , VGS=-10V , ID=-2A | --- | 19 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.1 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.95 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=3.3, ID=-1A | --- | 9 | --- | ns |
| Tr | Rise Time | --- | 6 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 38 | --- | ns | |
| Tf | Fall Time | --- | 33 | --- | ns | |
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | --- | 1229 | --- | pF |
| Coss | Output Capacitance | --- | 41 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 29 | --- | pF |
Diode Characteristics (P-Channel)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -1.5 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
Application Scenarios
- Power Management
- DC Motor Control
2410121655_HUASHUO-HSBA0903_C5341695.pdf
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