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quality P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline factory
quality P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline factory
quality P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline factory
quality P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline factory

P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline

Key Attributes
Model Number: HSL6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
19A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
24mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.635nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSL6115
Package:
SOT-223
Product Description

Product Overview

The HSL6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features a super low gate charge with excellent CdV/dt effect decline. Its advanced high cell density trench technology ensures reliable performance.

Product Attributes

  • Brand: HSL
  • Product Type: P-Ch MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSL6115 Drain-Source Voltage (VDS) - - - -60 V
Gate-Source Voltage (VGS) - - - ±20 V
Continuous Drain Current (ID) @ TC=25 (-VGS @ -10V) - - -19 - A
Continuous Drain Current (ID) @ TC=70 (-VGS @ -10V) - - -15 - A
Continuous Drain Current (ID) @ TA=25 (-VGS @ -10V) - - -7.2 - A
Continuous Drain Current (ID) @ TA=70 (-VGS @ -10V) - - -5.7 - A
Pulsed Drain Current (IDM) - - -55 - A
Single Pulse Avalanche Energy (EAS) - 113 - mJ
Avalanche Current (IAS) - -47.6 - A
Total Power Dissipation (PD) @ TA=25 - - 2 - W
Storage Temperature Range (TSTG) - -55 - 150
Operating Junction Temperature Range (TJ) - -55 - 150
HSL6115 Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA -60 - - V
Static Drain-Source On-Resistance (RDS(ON),max) VGS=-10V , ID=-10A - 24 28 m
Static Drain-Source On-Resistance (RDS(ON),max) VGS=-4.5V , ID=-8A - 31 36 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V
Drain-Source Leakage Current (IDSS) VDS=-48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current (IGSS) VGS=±20V , VDS=0V - - ±100 nA
Total Gate Charge (Qg) (-4.5V) VDS=-20V , VGS=-4.5V , ID=-10A - 25 - nC
Input Capacitance (Ciss) VDS=-15V , VGS=0V , f=1MHz - 3635 - pF
Output Capacitance (Coss) - - - 224 - pF
Reverse Transfer Capacitance (Crss) - - - 141 - pF
HSL6115 Continuous Source Current (IS) VG=VD=0V , Force Current - - -19 A
Diode Forward Voltage (VSD) VGS=0V , IS=-1A , TJ=25 - - -1 V
Model Package Code Packaging Quantity
HSL6115 SOT-223 3000/Tape&Reel 3000

2504101957_HUASHUO-HSL6115_C45385110.pdf
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