power management mosfet huayi hyg072n10ls1p n channel enhancement mode 100 volt 80 amp rating device
Key Attributes
Model Number:
HYG072N10LS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.7mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
150pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.07nF
Gate Charge(Qg):
54.3nC@10V
Mfr. Part #:
HYG072N10LS1P
Package:
TO-220FB-3L
Product Description
HYG072N10LS1P N-Channel Enhancement Mode MOSFET
The HYG072N10LS1P is a 100V/80A N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and general power management for DC/DC applications. It offers low on-state resistance (RDS(ON) = 6.7 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 MSL classification
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGSS | Gate-Source Voltage | V | +20/-12 | |||
| TJ | Junction Temperature Range | C | -55 | 150 | ||
| TSTG | Storage Temperature Range | C | -55 | 150 | ||
| ID | Continuous Drain Current | Tc=25C | A | 80 | ||
| Tc=100C | A | 50.6 | ||||
| IDM | Pulsed Drain Current | Tc=25C | A | 290 | ||
| PD | Maximum Power Dissipation | Tc=25C | W | 104 | ||
| RJC | Thermal Resistance-Junction to Lead | C/W | 1.2 | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250A | V | 100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | A | 1 | ||
| TJ=100C | A | 50 | ||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 1.0 | 1.6 | 3.0 |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V,IDS=20A | m | 6.7 | 8 | |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=4.5V,IDS=20A | m | 9.6 | 12 | |
| VSD* | Diode Forward Voltage | ISD=20A,VGS=0V | V | 0.8 | 1.3 | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1MHz | pF | 3070 | - | |
| Coss | Output Capacitance | pF | 1170 | - | ||
| Crss | Reverse Transfer Capacitance | pF | 150 | - | ||
| Qg(10V) | Total Gate Charge | VDS =50V, VGS=10V ID=20A | nC | 54.3 | - | |
| Qg(4.5V) | Total Gate Charge | nC | 30.7 | - | ||
2409302230_HUAYI-HYG072N10LS1P_C5121325.pdf
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