N Channel Enhancement MOSFET HUAYI HYG400N15NS1D Designed for LED Drive and Power Management Applications
Key Attributes
Model Number:
HYG400N15NS1D
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
RDS(on):
34mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
2.14nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
HYG400N15NS1D
Package:
TO-252-2
Product Description
Product Overview
The HYG400N15NS1D is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 150V and a continuous drain current of 30A, with a low on-state resistance of 34m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is suitable for applications such as LED drive power and DC/DC power management.
Product Attributes
- Brand: HYG (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Common Ratings (Tc=25C Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | V | 150 | |||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Maximum Junction Temperature | TJ | C | -55 | 175 | ||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C | A | 30 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 100 | ||
| Continuous Drain Current | ID | Tc=25C | A | 30 | ||
| Continuous Drain Current | ID | Tc=100C | A | 21 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 63 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 32 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 2.35 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Surface mounted on FR-4 board. | C/W | 60 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, starting TJ=25C, L = 0.3mH, VDS=100V, VGS =10V | mJ | 75 | ||
| Static Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 150 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=150V,VGS=0V | A | 1.0 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | m | 34 | 41 | |
| Diode Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | V | 0.87 | 1.3 | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | ns | 64.2 | ||
| Reverse Recovery Charge | Qrr | nC | 205.1 | |||
| Dynamic Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.1 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=75V, Frequency=1.0MHz | pF | 2140 | ||
| Output Capacitance | Coss | pF | 101 | |||
| Reverse Transfer Capacitance | Crss | pF | 2.5 | |||
| Turn-on Delay Time | td(ON) | VDD=75V,RG=4, IDS=20A,VGS=10V | ns | 13.7 | ||
| Turn-on Rise Time | Tr | ns | 29.1 | |||
| Turn-off Delay Time | td(OFF) | ns | 25 | |||
| Turn-off Fall Time | Tf | ns | 18.2 | |||
| Gate Charge Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Total Gate Charge | Qg | VDS=75V, VGS=10V ID=20A | nC | 30 | ||
| Gate-Source Charge | Qgs | nC | 13 | |||
| Gate-Drain Charge | Qgd | nC | 4 | |||
2411220407_HUAYI-HYG400N15NS1D_C5121314.pdf
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