High cell density trench technology P channel MOSFET HUASHUO HSBB02P15 for power management circuits
Key Attributes
Model Number:
HSBB02P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
780mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 P-Channel
Output Capacitance(Coss):
39pF
Input Capacitance(Ciss):
400pF
Pd - Power Dissipation:
7.7W
Gate Charge(Qg):
4.5nC@10V
Mfr. Part #:
HSBB02P15
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB02P15 is a P-channel 150V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed. It is available as a Green Device and boasts super low gate charge with excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -2 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -1.3 | A | |||
| IDM | Pulsed Drain Current2 | -8 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 11.5 | mJ | |||
| IAS | Avalanche Current | 4.8 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 7.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 16 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -150 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.12 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-2 A | --- | 640 | 780 | m |
| VGS=-6V , ID=-0.5A | --- | 710 | 950 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2 | -3 | -4 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-150V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| VDS=-120V , VGS=0V , TJ=55 | --- | --- | -10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-10V , ID=-1A | --- | 2 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 30 | 60 | |
| Qg | Total Gate Charge (-4.5V) | VDS=-75V , VGS=-10V , ID=-1A | --- | 4.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 0.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 1.5 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=-75V , VGS=-10V , RG=10, ID=-1A | --- | 13 | --- | ns |
| tr | Rise Time | --- | 8.8 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 17 | --- | ns | |
| tf | Fall Time | --- | 11.2 | --- | ns | |
| Ciss | Input Capacitance | VDS=-75V , VGS=0V , f=1MHz | --- | 400 | --- | pF |
| Coss | Output Capacitance | --- | 39 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 23 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -2 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -4 | A | |
| trr | Reverse Recovery Time | VGS=0V,IS=1A , di/dt=100A/s TJ=25C | --- | 70 | --- | ns |
| Qrr | Reverse Recovery Charge | --- | 113 | --- | nC | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB02P15 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410121653_HUASHUO-HSBB02P15_C2828496.pdf
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