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quality N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance factory
quality N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance factory
quality N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance factory
quality N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance factory

N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance

Key Attributes
Model Number: HSL1N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
1A
RDS(on):
1Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
14pF
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
HSL1N25
Package:
SOT-223
Product Description

Product Overview

The HSL1N25 is a high-performance N-channel Fast Switching MOSFET featuring an N-ch 250V rating and extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology. It is available as a Green Device.

Product Attributes

  • Brand: HSL
  • Technology: Trench MOSFET
  • Channel Type: N-Channel
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, full function reliability approved

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 200 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 1 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 0.7 A
IDM Pulsed Drain Current2 4 A
PD@TA=25 Total Power Dissipation3 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 1 --- 65 /W
RJC Thermal Resistance Junction-Case 1 --- 35 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 250 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=1A 1000 1200 m
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=0.5A 1100 1300 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.8 3 V
IDSS Drain-Source Leakage Current VDS=250V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=250V , VGS=0V , TJ=125 --- 100 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=1A 7.9 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.8 ---
Qg Total Gate Charge (10V) VDS=100V , VGS=10V , ID=1A 12.5 --- nC
Qgs Gate-Source Charge 2 --- nC
Qgd Gate-Drain Charge 2.5 --- nC
Td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=6 ID=1A 13 --- ns
Tr Rise Time 9 --- ns
Td(off) Turn-Off Delay Time 38 --- ns
Tf Fall Time 8 --- ns
Ciss Input Capacitance VDS=100V , VGS=0V , f=1MHz 670 --- pF
Coss Output Capacitance 14 --- pF
Crss Reverse Transfer Capacitance 8 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 1 A
ISM Pulsed Source Current2,5 --- 4 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=1A , dI/dt=100A/s , TJ=25 --- 75 ns
Qrr Reverse Recovery Charge --- 270 nC
Part Number Package Packaging Quantity/Reel
HSL1N25 SOT-223 3000/Tape&Reel 3000

2508281825_HUASHUO-HSL1N25_C51025831.pdf
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