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quality P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline factory
quality P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline factory
quality P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline factory
quality P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline factory

P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline

Key Attributes
Model Number: HSM6117
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
RDS(on):
14mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
241pF
Number:
1 P-Channel
Output Capacitance(Coss):
524pF
Input Capacitance(Ciss):
4.635nF
Pd - Power Dissipation:
5.2W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
HSM6117
Package:
SOP-8
Product Description

Product Overview

The HSM6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch MOSFETs
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, -VGS @ -10V1 -15 A
ID@TC=100 Continuous Drain Current, -VGS @ -10V1 -9.5 A
IDM Pulsed Drain Current2 -60 A
IAS Avalanche Current 40 A
PD@TC=25 Total Power Dissipation4 5.2 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Thermal Data
Symbol Parameter Typ. Max. Units
RJA Thermal Resistance Junction-Ambient --- 85 /W
RJC Thermal Resistance Junction-Case1 --- 24 /W
Electrical Characteristics
Symbol Parameter Conditions Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-10A --- 14 m
VGS=-4.5V , ID=-8A --- 17 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -2.5 V
VGS(th) VGS(th) Temperature Coefficient --- 4.28 mV/
IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25 --- 1 uA
VDS=-48V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=-10V , ID=-10A --- 43 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6
Qg Total Gate Charge VDS=-30V , VGS=-10V , ID=-5A --- 85 nC
Qgs Gate-Source Charge --- 11 nC
Qgd Gate-Drain Charge --- 30 nC
Td(on) Turn-On Delay Time VDD=-30V , VGS=-10V , RG=6, ID=-1A --- 18 ns
Tr Rise Time --- 12 ns
Td(off) Turn-Off Delay Time --- 100 ns
Tf Fall Time --- 68 ns
Ciss Input Capacitance VDS=-30V , VGS=0V , f=1MHz --- 4635 pF
Coss Output Capacitance --- 524 pF
Crss Reverse Transfer Capacitance --- 241 pF
Diode Characteristics
Symbol Parameter Conditions Typ. Max. Units
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- -15 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- -1.2 V
Ordering Information
Part Number Package Code Packaging
HSM6117 SOP-8 2500/Tape&Reel

2411061706_HUASHUO-HSM6117_C42376788.pdf
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