Power MOSFET HUAYI HYG016N04LS1W Featuring Low On Resistance and High Maximum Junction Temperature
Key Attributes
Model Number:
HYG016N04LS1W
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
290A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.538nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
HYG016N04LS1W
Package:
TO-247A-3L
Product Description
Product Overview
The HYG016N04LS1W is an N-Channel Enhancement Mode MOSFET designed for switching applications, inverters, and power tools. It features low on-state resistance (RDS(ON)) of 1.2 m (typ.) at VGS = 10V and 1.6 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. This device is Halogen-Free and Green (RoHS Compliant).
Product Attributes
- Brand: HYM (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free
- Package Type: TO-247A-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | 40 | ||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Maximum Junction Temperature | TJ | C | 175 | |||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous(Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 290 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 1150 | ||
| Continuous Drain Current | ID | Tc=25C | A | 290 | ||
| Continuous Drain Current | ID | Tc=100C | A | 205 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 250 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 125 | ||
| Thermal Resistance-Junction to Case | RJC | C/W | 0.6 | |||
| Thermal Resistance-Junction to Ambient | RJA | Surface Mounted on FR4 Board | C/W | 40 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, VD=32V,VGS=10V, Starting TJ=25C | mJ | 750*** | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | V | 40 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=40,VGS=0V | A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | 50 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | V | 1 | 1.8 | 3 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | 100 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=40A | m | 1.2 | 1.5 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=40A | m | 1.6 | 2.0 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=40A,VGS=0V | V | 0.8 | 1.2 | |
| Reverse Recovery Time | trr | ISD=40A,dISD/dt=100A/s | ns | 44 | ||
| Reverse Recovery Charge | Qrr | nC | 43 | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 1.7 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=500KHz | pF | 5538 | ||
| Output Capacitance | Coss | pF | 1300 | |||
| Reverse Transfer Capacitance | Crss | pF | 80 | |||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4, IDS=40A,VGS=10V | ns | 16 | ||
| Turn-on Rise Time | Tr | ns | 82 | |||
| Turn-off Delay Time | td(OFF) | ns | 77 | |||
| Turn-off Fall Time | Tf | ns | 108 | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =32V, VGS=10V ID=40A | nC | 90 | ||
| Total Gate Charge | Qg | VGS=4.5V | nC | 43 | ||
| Gate-Source Charge | Qgs | nC | 20 | |||
| Gate-Drain Charge | Qgd | nC | 17 | |||
2409302203_HUAYI-HYG016N04LS1W_C2897363.pdf
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