High cell density trenched MOSFET HUASHUO HSBA50N06 suitable for synchronous buck converter circuits
Key Attributes
Model Number:
HSBA50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
12mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
106pF@4.5V
Number:
1 N-channel
Input Capacitance(Ciss):
2.84nF@15V
Pd - Power Dissipation:
62W
Gate Charge(Qg):
23nC@4.5V
Mfr. Part #:
HSBA50N06
Package:
PRPAK5x6-8
Product Description
Product Overview
The HSBA50N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent decline of CdV/dt effect, enabled by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
- Package Type: PRPAK5*6
- Packaging: 3000/Tape&Reel
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current (ID) | TC=25, VGS @ 10V | 50 | A | ||
| Continuous Drain Current (ID) | TC=70, VGS @ 10V | 39 | A | ||
| Pulsed Drain Current (IDM) | 110 | A | |||
| Single Pulse Avalanche Energy (EAS) | 70 | mJ | |||
| Avalanche Current (IAS) | 38 | A | |||
| Total Power Dissipation (PD) | TC=25 | 62 | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 2 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.052 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=30A | 12 | 16 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=15A | 14 | 20 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| VGS(th) Temperature Coefficient | -5.76 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=30A | 45 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.7 | --- | ||
| Total Gate Charge (Qg) | VDS=48V , VGS=4.5V , ID=15A | 23 | --- | nC | |
| Gate-Source Charge (Qgs) | 7.5 | --- | nC | ||
| Gate-Drain Charge (Qgd) | 7.9 | --- | nC | ||
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=15A | 7.4 | --- | ns | |
| Rise Time (Tr) | 50 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | 36 | --- | ns | ||
| Fall Time (Tf) | 7.8 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 2840 | --- | pF | |
| Output Capacitance (Coss) | 150 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | 106 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 50 | A | |
| Pulsed Source Current (ISM) | --- | 90 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=A , TJ=25 | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/µs , TJ=25 | 16 | --- | ns | |
| Reverse Recovery Charge (Qrr) | 11 | --- | nC |
2410121456_HUASHUO-HSBA50N06_C7543697.pdf
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