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quality Power Management MOSFET HUAYI HYG023N03LR1C2 Single N Channel Enhancement Mode for DC DC Converters factory
quality Power Management MOSFET HUAYI HYG023N03LR1C2 Single N Channel Enhancement Mode for DC DC Converters factory

Power Management MOSFET HUAYI HYG023N03LR1C2 Single N Channel Enhancement Mode for DC DC Converters

Key Attributes
Model Number: HYG023N03LR1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
462pF
Number:
1 N-channel
Output Capacitance(Coss):
561pF
Input Capacitance(Ciss):
4.71nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
93nC
Mfr. Part #:
HYG023N03LR1C2
Package:
DFN5x6-8L
Product Description

Product Overview

The HYG023N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages and is 100% avalanche tested for reliability and ruggedness. Halogen-free options are available.

Product Attributes

  • Brand: HYM
  • Origin: China (Huayi Microelectronics Co., Ltd.)
  • Material: Lead-free (RoHS compliant), Halogen-free options available
  • Certifications: RoHS compliant, IPC/JEDEC J-STD-020 compliant for MSL classification

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--30V
Gate-Source VoltageVGSS--±20V
Maximum Junction TemperatureTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25°C, Mounted on Large Heat Sink--125A
Pulsed Drain CurrentIDMTc=25°C--500A
Continuous Drain CurrentIDTc=25°C--125A
Continuous Drain CurrentIDTc=100°C--88A
Maximum Power DissipationPDTc=25°C--62.5W
Maximum Power DissipationPDTc=100°C--31.2W
Thermal Resistance, Junction-to-CaseRθJC--2.4-°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on FR-4 board-45-°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25°C-329-mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V, IDS=250μA30--V
Drain-to-Source Leakage CurrentIDSSVDS=30V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250μA1.01.73.0V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=20A-1.52.0mΩ
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=20A-2.12.8mΩ
Diode Characteristics
Diode Forward VoltageVSDISD=20A,VGS=0V-0.861.2V
Reverse Recovery TimetrrISD=20A,dISD/dt=100A/μs-21.2-ns
Reverse Recovery ChargeQrr--13.1-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V, Frequency=1.0MHz-2.3-Ω
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-4710-pF
Output CapacitanceCoss--561-pF
Reverse Transfer CapacitanceCrss--462-pF
Turn-on Delay Timetd(ON)VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V-13-ns
Turn-on Rise TimeTr--64-ns
Turn-off Delay Timetd(OFF)--96-ns
Turn-off Fall TimeTf--86-ns
Gate Charge Characteristics
Total Gate ChargeQgVGS=10V, VDS =24V, ID=20A-93-nC
Total Gate ChargeQgVGS=4.5V-48-nC
Gate-Source ChargeQgs--11.1-nC
Gate-Drain ChargeQgd--23.9-nC

2410121326_HUAYI-HYG023N03LR1C2_C2763417.pdf

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