N channel enhancement mode mosfet huayi hy3403p offering switching performance and lead free construction
Key Attributes
Model Number:
HY3403P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
140A
RDS(on):
3.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
115W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HY3403P
Package:
TO-220FB
Product Description
Product Overview
The HY3403P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance (RDS(ON)) of 2.2m typ. at VGS=10V and 2.7m typ. at VGS=4.5V, a high continuous drain current of 140A, and is 100% avalanche tested. It also offers excellent CdV/dt effect decline and is available in lead-free versions.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Material: Lead-Free Device Available
- Certifications: RoHS compliant, Halogen free
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Unit |
| HY3403P/B | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250uA | 30 | - | - | V |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250uA | 1 | 1.5 | 3 | V | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=10V,IDS=70A | - | 2.2 | 2.8 | m | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=4.5V,IDS=70A | - | 2.7 | 3.4 | m | |
| Continuous Drain Current (ID) | Tc=25C | - | - | 140 | A | |
| Continuous Drain Current (ID) | Tc=100C | - | - | 101 | A | |
| Pulsed Drain Current (IDM) | Tc=25C | - | - | 560 | A | |
| Maximum Power Dissipation (PD) | Tc=25C | - | - | 115 | W | |
| Maximum Power Dissipation (PD) | Tc=100C | - | - | 57.5 | W | |
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4726 | - | pF | |
| Total Gate Charge (Qg) | VDS =24V, VGS=10V ID=70A | - | 120 | - | nC |
2410121932_HUAYI-HY3403P_C357987.pdf
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